Semiconductor device and manufacturing method thereof

ABSTRACT

A first oxide insulating film is formed over a substrate. After a first oxide semiconductor film is formed over the first oxide insulating film, heat treatment is performed, so that hydrogen contained in the first oxide semiconductor film is released and part of oxygen contained in the first oxide insulating film is diffused into the first oxide semiconductor film. Thus, a second oxide semiconductor film with reduced hydrogen concentration and reduced oxygen defect is formed. Then, the second oxide semiconductor film is selectively etched to form a third oxide semiconductor film, and a second oxide insulating film is formed. The second oxide insulating film is selectively etched and a protective film covering an end portion of the third oxide semiconductor film is formed. Then, a pair of electrodes, a gate insulating film, and a gate electrode are formed over the third oxide semiconductor film and the protective film.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device which includes acircuit including a semiconductor element such as a transistor, and amethod for manufacturing the semiconductor device. For example, thepresent invention relates to an electronic device which includes, as acomponent, a power device mounted in a power circuit; a semiconductorintegrated circuit including a memory, a thyristor, a converter, animage sensor, or the like; an electro-optical device typified by aliquid crystal display panel; a light-emitting display device includinga light-emitting element; or the like.

In this specification, a semiconductor device means all types of deviceswhich can function by utilizing semiconductor characteristics, and anelectro-optical device, a light-emitting display device, a semiconductorcircuit, and an electronic device are all semiconductor devices.

2. Description of the Related Art

A transistor formed over a glass substrate or the like is manufacturedusing amorphous silicon, polycrystalline silicon, or the like, astypically seen in liquid crystal display devices. Although a transistorincluding amorphous silicon has low field effect mobility, it can beformed over a larger glass substrate. On the other hand, although atransistor including polycrystalline silicon has high field effectmobility, it is not suitable for being formed over a larger glasssubstrate.

In contrast to a transistor including silicon, attention has been drawnto a technique by which a transistor is manufactured using an oxidesemiconductor and is applied to an electronic device or an opticaldevice. For example, Patent Document 1 and Patent Document 2 disclose atechnique by which a transistor is manufactured using zinc oxide or anIn—Ga—Zn—O-based oxide as an oxide semiconductor and is used as aswitching element of a pixel or the like of a display device.

Meanwhile, it has been pointed out that hydrogen is a source of carriersparticularly in an oxide semiconductor. Therefore, some measures need tobe taken to prevent hydrogen from entering the oxide semiconductor atthe time of forming the oxide semiconductor. Further, variation of athreshold voltage is suppressed by reducing the amount of hydrogencontained in not only the oxide semiconductor but also a gate insulatingfilm in contact with the oxide semiconductor (see Patent Document 3).

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    2007-123861-   [Patent Document 2] Japanese Published Patent Application No.    2007-096055-   [Patent Document 3] Japanese Published Patent Application No.    2009-224479

SUMMARY OF THE INVENTION

However, in a transistor including an oxide semiconductor, if a sidesurface of the oxide semiconductor is exposed to a reduced-pressureatmosphere, oxygen in the oxide semiconductor is released and an oxygendefect (also referred to as an oxygen vacancy or an oxygen deficiency)is formed. The oxygen defect affects electrical characteristics of thetransistor because carriers easily flow in a region where the oxygendefect is formed in the oxide semiconductor. Typically, there is aproblem such that a leakage current between a source and a drain of thetransistor becomes high.

In view of the above, an object of an embodiment of the presentinvention is to provide a transistor including an oxide semiconductorwith favorable electrical characteristics and a manufacturing methodthereof.

According to an embodiment of the present invention, a first oxideinsulating film is formed over a substrate; and after forming a firstoxide semiconductor film over the first oxide insulating film, heattreatment is performed to release hydrogen contained in the first oxidesemiconductor film and diffuse part of oxygen contained in the firstoxide insulating film into the first oxide semiconductor film, so that asecond oxide semiconductor film whose hydrogen concentration and oxygendefects are reduced is formed. Next, the second oxide semiconductor filmis selectively etched to form a third oxide semiconductor film; then asecond oxide insulating film is formed; and the second oxide insulatingfilm is selectively etched to form a protective film that covers an endportion of the third oxide semiconductor film. Then, a pair ofelectrodes, a gate insulating film, and a gate electrode are formed overthe third oxide semiconductor film and the protective film.

According to another embodiment of the present invention, a first oxideinsulating film is formed over a substrate; a first oxide semiconductorfilm is formed over the first oxide insulating film; the first oxidesemiconductor film is selectively etched, so that a second oxidesemiconductor film is formed. Next, after forming a second oxideinsulating film that covers the first oxide insulating film and thesecond oxide semiconductor film, heat treatment is performed to diffusepart of oxygen contained in the first oxide insulating film and thesecond oxide insulating film into the second oxide semiconductor film,so that a third oxide semiconductor film whose hydrogen concentrationand oxygen defects are reduced is formed. Next, the second oxideinsulating film is selectively etched, so that a protective film thatcovers an end portion of the third oxide semiconductor film is formed.Then, a pair of electrodes, a gate insulating film, and a gate electrodeare formed over the third oxide semiconductor film and the protectivefilm.

According to another embodiment of the present invention, a first oxideinsulating film is formed over a substrate, a first oxide semiconductorfilm is formed over the first oxide insulating film, and a pair ofelectrodes is formed over the first oxide semiconductor film. Next, thefirst oxide semiconductor film is selectively etched, so that a secondoxide semiconductor film is formed. Then, a second oxide insulating filmthat covers the first oxide insulating film, the pair of electrodes, andthe second oxide semiconductor film is formed, and after that heattreatment is performed to diffuse part of oxygen contained in the firstoxide insulating film and the second oxide insulating film into thesecond oxide semiconductor film, so that a third oxide semiconductorfilm whose hydrogen concentration and oxygen defects are reduced isformed. Next, the second oxide insulating film is selectively etched, sothat a protective film that covers an end portion of the third oxidesemiconductor film is formed. Then, a gate insulating film and a gateelectrode are formed over the third oxide semiconductor film and theprotective film.

The first oxide insulating film and the second oxide insulating film areeach formed using an oxide insulating film from which part of oxygen isreleased by heat treatment. The oxide insulating film from which part ofoxygen is released by heat treatment is preferably an oxide insulatingfilm which contains oxygen at a proportion exceeding the stoichiometricproportion. The oxide insulating film from which part of oxygen isreleased by heat treatment can diffuse oxygen into the first oxidesemiconductor film or the second oxide semiconductor film by heattreatment, because oxygen is released from the oxide insulating film byheat treatment. Typical examples of the oxide insulating film from whichpart of oxygen is released by heat treatment include films of siliconoxide, silicon oxynitride, silicon nitride oxide, aluminum oxide,aluminum oxynitride, gallium oxide, hafnium oxide, yttrium oxide, andthe like.

In an embodiment of the present invention, by heating the first oxidesemiconductor film or the second oxide semiconductor film at least in astate where the first oxide semiconductor film or the second oxidesemiconductor film is in contact with the first oxide insulating film,oxygen contained in the first oxide insulating film is diffused into thefirst oxide semiconductor film or the second oxide semiconductor film,so that oxygen defects can be reduced. Further, the interface statedensity at the interface between the first oxide insulating film and thefirst oxide semiconductor film or the second oxide semiconductor filmcan be reduced. As a result, the negative shift of the threshold voltageof the transistor can be reduced.

Since the pair of electrodes, the gate insulating film, and the gateelectrode are formed after the end portion of the third oxidesemiconductor film is covered by the protective film, a side surface ofthe third oxide semiconductor film is not exposed to a reduced-pressureatmosphere. In addition, in a process of forming the pair of electrodes,the side surface of the third oxide semiconductor film is not exposed toan etching atmosphere. Accordingly, generation of oxygen defects at theside surface of the third oxide semiconductor film can be reduced.

In an embodiment of the present invention, when a dopant is added to thethird oxide semiconductor film with the use of the protective film, thegate electrode, and the pair of electrodes as masks, a pair of regionscontaining a dopant is formed in a self-aligned manner. As the dopant,at least one of hydrogen, helium, neon, argon, krypton, and xenon isused, and the concentration of the dopant in the pair of regionscontaining a dopant is higher than or equal to 5×10¹⁸ atoms/cm³ andlower than or equal to 1×10²² atoms/cm³, preferably higher than or equalto 5×10¹⁸ atoms/cm³ and lower than or equal to 5×10¹⁹ atoms/cm³. In thismanner, a first oxide semiconductor region overlapping with the gateelectrode, the pair of regions containing a dopant between which thefirst oxide semiconductor region is sandwiched, and a pair of secondoxide semiconductor regions which overlaps with the pair of electrodesand between which the pair of regions containing a dopant is sandwichedcan be formed. The first oxide semiconductor region functions as achannel region, and the pair of regions containing a dopant functions aselectric-field relaxation regions. Thus, a short-channel effect of thetransistor can be suppressed. Since the gate electrode does not overlapwith the pair of electrodes, parasitic capacitance can be reduced, whichleads to high-speed operation of the transistor.

After the dopant is added, heat treatment may be performed.

The oxide semiconductor can include one or more elements selected fromIn, Ga, Sn, and Zn.

An oxide semiconductor can be a non-single-crystal material including aphase which has a triangular, hexagonal, regular triangular, or regularhexagonal atomic arrangement when seen from the direction perpendicularto the a-b plane and in which metal atoms are arranged in a layeredmanner or metal atoms and oxygen atoms are arranged in a layered mannerwhen seen from the direction perpendicular to the c-axis.

In this specification, the non-single-crystal material including a phasewhich has a triangular, hexagonal, regular triangular, or regularhexagonal atomic arrangement when seen from the direction perpendicularto the a-b plane and in which metal atoms are arranged in a layeredmanner or metal atoms and oxygen atoms are arranged in a layered mannerwhen seen from the direction perpendicular to the c-axis is referred toas a CAAC (c-axis aligned crystals) oxide semiconductor.

The CAAC oxide semiconductor is not a single crystal and, in addition,is not composed of only an amorphous component. Although the CAAC oxidesemiconductor includes a crystallized portion (crystalline portion), aboundary between one crystalline portion and another crystalline portionis not clear in some cases. Nitrogen may be substituted for part of orall of oxygen included in the CAAC oxide semiconductor. The c-axes ofindividual crystalline portions included in the CAAC oxide semiconductormay be aligned in a certain direction (e.g., a direction perpendicularto a surface of a substrate over which the CAAC oxide semiconductor isformed or a surface of the CAAC oxide semiconductor). Alternatively, thenormals of the a-b planes of the individual crystalline portionsincluded in the CAAC oxide semiconductor may be aligned in a certaindirection (e.g., a direction perpendicular to the surface of a substrateover which the CAAC oxide semiconductor is formed, the surface of theCAAC oxide semiconductor, or the like).

The CAAC oxide semiconductor may become a conductor or an insulatordepending on its composition or the like. The CAAC oxide semiconductortransmits or does not transmit visible light depending on itscomposition or the like. An example of a CAAC oxide semiconductor is amaterial which is formed into a film shape and has a triangular orhexagonal atomic arrangement when observed from the directionperpendicular to a surface of the film, a surface of a substrate, or aninterface and in which metal atoms are arranged in a layered manner ormetal atoms and oxygen atoms (or nitrogen atoms) are arranged in alayered manner when a cross section of the film is observed.

With an embodiment of the present invention, oxygen defects in the oxidesemiconductor film can be reduced. As a result, the negative shift ofthe threshold voltage of the transistor can be reduced and, in addition,a leakage current between a source and a drain of the transistor can bereduced; accordingly, electrical characteristics of the transistor canbe improved.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1A is a top view illustrating a semiconductor device according toan embodiment of the present invention and FIGS. 1B to 1D arecross-sectional views thereof;

FIGS. 2A to 2E are cross-sectional views illustrating a manufacturingmethod of a semiconductor device according to an embodiment of thepresent invention;

FIGS. 3A to 3C are cross-sectional views illustrating a manufacturingmethod of a semiconductor device according to an embodiment of thepresent invention;

FIGS. 4A to 4D are cross-sectional views illustrating a manufacturingmethod of a semiconductor device according to an embodiment of thepresent invention;

FIGS. 5A to 5C are cross-sectional views illustrating a manufacturingmethod of a semiconductor device according to an embodiment of thepresent invention;

FIG. 6 is a top view illustrating a manufacturing method of asemiconductor device according to an embodiment of the presentinvention;

FIG. 7A is a top view illustrating a semiconductor device according toan embodiment of the present invention and FIG. 7B is a cross-sectionalview thereof;

FIGS. 8A to 8C are cross-sectional views illustrating a manufacturingmethod of a semiconductor device according to an embodiment of thepresent invention;

FIG. 9A is a top view illustrating a manufacturing method of asemiconductor device according to an embodiment of the present inventionand FIGS. 9B and 9C are cross-sectional views thereof;

FIGS. 10A to 10D are cross-sectional views illustrating a manufacturingmethod of a semiconductor device according to an embodiment of thepresent invention;

FIGS. 11A to 11D are cross-sectional views illustrating a manufacturingmethod of a semiconductor device according to an embodiment of thepresent invention;

FIG. 12 is a cross-sectional view illustrating a semiconductor deviceand a manufacturing method thereof according to an embodiment of thepresent invention;

FIGS. 13A to 13D are cross-sectional views illustrating a manufacturingmethod of a semiconductor device according to an embodiment of thepresent invention;

FIGS. 14A and 14B are circuit diagrams illustrating a semiconductordevice according to an embodiment of the present invention;

FIG. 15 is a circuit diagram illustrating a semiconductor deviceaccording to an embodiment of the present invention;

FIGS. 16A and 16B are circuit diagrams each illustrating a semiconductordevice according to an embodiment of the present invention;

FIGS. 17A and 17B are circuit diagrams each illustrating a semiconductordevice according to an embodiment of the present invention;

FIG. 18A is a block diagram illustrating a semiconductor device which isa specific example of a CPU and FIGS. 18B and 18C are circuit diagramseach illustrating a part thereof;

FIG. 19A is a top view illustrating a display device including asemiconductor device according to an embodiment of the present inventionand FIG. 19B is a cross-sectional view thereof;

FIGS. 20A to 20F are cross-sectional views illustrating operation modesof liquid crystals;

FIGS. 21A to 21D are cross-sectional views illustrating operation modesof liquid crystals;

FIGS. 22A to 22D are cross-sectional views illustrating operation modesof liquid crystals;

FIGS. 23A and 23B are a top view and a cross-sectional view illustratingan operation mode of liquid crystals;

FIGS. 24A to 24C are top views each illustrating a structure of a pixelelectrode;

FIGS. 25A to 25C are top views each illustrating a structure of a pixelelectrode;

FIG. 26A is a circuit diagram illustrating a mode of a protectioncircuit and FIG. 26B is a top view thereof;

FIG. 27 is a diagram describing a model that is used for calculation;and

FIGS. 28A to 28C are diagrams describing models used for calculation.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention will be described in detail withreference to the accompanying drawings. Note that the present inventionis not limited to the following description, and it will be easilyunderstood by those skilled in the art that modes and details thereofcan be modified in various ways without departing from the spirit andthe scope of the present invention. Therefore, the present inventionshould not be construed as being limited to the description in thefollowing embodiments. Note that in structures of the present inventiondescribed hereinafter, the same portions or portions having similarfunctions are denoted by the same reference numerals in differentdrawings, and description thereof is not repeated.

Note that in each drawing described in this specification, the size, thefilm thickness, or the region of each component is exaggerated forclarity in some cases. Therefore, embodiments of the present inventionare not always limited to such scales.

In addition, terms such as “first”, “second”, and “third” in thisspecification are used in order to avoid confusion among components, andthe terms do not limit the components numerically. Therefore, forexample, the term “first” can be replaced with the term “second”,“third”, or the like as appropriate.

Embodiment 1

In this embodiment, a structure of a transistor in which a leakagecurrent can be reduced and a manufacturing method of the transistor willbe described with reference to FIGS. 1A to 1D, FIGS. 2A to 2E, and FIGS.3A to 3C.

FIGS. 1A to 1D are a top view and cross-sectional views of a transistordescribed in this embodiment. FIG. 1A is the top view of the transistordescribed in this embodiment, FIG. 1B is a cross-sectional view takenalong a dashed-dotted line A-B in FIG. 1A, FIG. 1C is a cross-sectionalview taken along a dashed-dotted line C-D in FIG. 1A, and FIG. 1D is across-sectional view taken along a dashed-dotted line E-F in FIG. 1A. InFIG. 1A, some of components of the transistor (e.g., a gate insulatingfilm 111, an insulating film 125, and the like) are not shown forsimplicity.

The transistor illustrated in FIGS. 1A to 1D includes an oxideinsulating film 102 provided over a substrate 101, an oxidesemiconductor film 120 provided over the oxide insulating film 102, aprotective film 107 that covers an end portion of the oxidesemiconductor film 120, a pair of electrodes 109 formed over theprotective film 107 and in contact with the oxide semiconductor film120, a gate insulating film 111 which covers the protective film 107,the pair of electrodes 109, and the oxide semiconductor film 120, and agate electrode 113 formed over the gate insulating film 111 so as tooverlap with the oxide semiconductor film 120. Further, an insulatingfilm 125 which covers the gate insulating film 111 and the gateelectrode 113 may be included. The oxide semiconductor film 120 includesan oxide semiconductor region 119 overlapping with the gate electrode113, a pair of regions 115 and 117 containing a dopant between which theoxide semiconductor region 119 is sandwiched, and a pair of oxidesemiconductor regions 121 and 123 between which the pair of regions 115and 117 containing a dopant is sandwiched and which is in contact withthe pair of electrodes 109. Note that the oxide semiconductor region 119functions as a channel region, the pair of regions 115 and 117containing a dopant functions as electric-field relaxation regions, andportions in contact with the pair of electrodes 109 in the pair of oxidesemiconductor regions 121 and 123 function as a source region and adrain region. The end portion of the oxide semiconductor film 120covered by the protective film 107 includes at least a side surface ofthe oxide semiconductor film 120 and may further include part of a topsurface of the oxide semiconductor film 120.

There is no particular limitation on the property of a material and thelike of the substrate 101 as long as the material has heat resistanceenough to withstand at least heat treatment to be performed later. Forexample, a glass substrate, a ceramic substrate, a quartz substrate, ora sapphire substrate may be used as the substrate 101. Alternatively, asingle crystal semiconductor substrate or a polycrystallinesemiconductor substrate made of silicon, silicon carbide, or the like, acompound semiconductor substrate made of silicon germanium or the like,an SOI substrate, or the like may be used as the substrate 101. Stillalternatively, any of these substrates further provided with asemiconductor element may be used as the substrate 101.

A flexible substrate may also be used as the substrate 101. A separationlayer may be provided between the substrate 101 and the oxide insulatingfilm 102. The separation layer can be used when part or the whole of asemiconductor device formed over the separation layer is separated fromthe substrate 101 and transferred onto another substrate. In such acase, the semiconductor device can be transferred to a substrate havinglow heat resistance or a flexible substrate as well.

The oxide insulating film 102 is formed using an oxide insulating filmfrom which part of oxygen is released by heat treatment. As such anoxide insulating film from which part of oxygen is released by heattreatment, an oxide insulating film containing oxygen at a proportionexceeding the stoichiometric proportion is preferably used. The oxideinsulating film from which part of oxygen is released by heat treatmentcan diffuse oxygen into the oxide semiconductor film by heat treatment,because oxygen is released from the oxide insulating film by heattreatment. Typical examples of the oxide insulating film 102 includefilms of silicon oxide, silicon oxynitride, silicon nitride oxide,aluminum oxide, aluminum oxynitride, gallium oxide, hafnium oxide,yttrium oxide, and the like.

The thickness of the oxide insulating film 102 is greater than or equalto 50 nm, preferably greater than or equal to 200 nm and less than orequal to 500 nm. With use of the thick oxide insulating film 102, theamount of oxygen released from the oxide insulating film 102 can beincreased and, in addition, the interface state density at an interfacebetween the oxide insulating film 102 and an oxide semiconductor film tobe formed later can be reduced.

Here, “to release part of oxygen by heat treatment” means that theamount of released oxygen is greater than or equal to 1.0×10¹⁸atoms/cm³, preferably greater than or equal to 3.0×10²⁰ atoms/cm³ inthermal desorption spectroscopy (TDS) on an oxygen atom basis.

Here, a method for measuring the amount of released oxygen on an oxygenatom basis using TDS analysis will be described.

The amount of released gas in TDS analysis is proportional to theintegral value of a spectrum. Therefore, the amount of released gas canbe calculated from the ratio of the integral value of a spectrum of theinsulating film to the reference value of a standard sample. Thereference value of a standard sample refers to the ratio of the densityof a predetermined atom contained in a sample to the integral value of aspectrum.

For example, the number of the released oxygen molecules (N_(O2)) froman insulating film can be calculated according to Formula 1 using theTDS analysis results of a silicon wafer containing hydrogen at apredetermined density, which is the standard sample, and the TDSanalysis results of the insulating film. Here, all spectra having a massnumber of 32 which are obtained by the TDS analysis are assumed tooriginate from an oxygen molecule. CH₃OH can be given as a gas having amass number of 32, but is not taken into consideration on the assumptionthat it is unlikely to be present. Further, an oxygen molecule includingan oxygen atom having a mass number of 17 or 18, which is an isotope ofan oxygen atom, is also not taken into consideration because theproportion of such a molecule in the natural world is minimal.N _(O2) =N _(H2) /S _(H2) ×S _(O2)Δα  [Formula 1]

N_(H2) is the value obtained by conversion of the number of hydrogenmolecules released from the standard sample into density. S_(H2) is anintegral value of a spectrum of the standard sample which is analyzed byTDS. Here, the reference value of the standard sample is set toN_(H2)/S_(H2). S_(O2) is an integral value of a spectrum when theinsulating film is analyzed by TDS. α is a coefficient affecting theintensity of the spectrum in the TDS analysis. For details of Formula 1,Japanese Published Patent Application No. H6-275697 is referred to. Notethat the amount of released oxygen from the above insulating film wasmeasured with a thermal desorption spectroscopy apparatus produced byESCO Ltd., EMD-WA1000S/W using a silicon wafer containing hydrogen atomsat 1×10¹⁶ atoms/cm³ as the standard sample.

Further, in the TDS analysis, part of oxygen is detected as an oxygenatom. The ratio between oxygen molecules and oxygen atoms can becalculated from the ionization rate of oxygen molecules. Note that,since the above a includes the ionization rate of oxygen molecules, thenumber of the released oxygen atoms can also be estimated through theevaluation of the number of the released oxygen molecules.

Note that N_(O2) is the number of released oxygen molecules. The amountof released oxygen on an oxygen atom basis is twice the number of thereleased oxygen molecules.

In the above structure, the insulating film from which oxygen isreleased by heat treatment may be oxygen-excess silicon oxide (SiO_(X)(X>2)). In the oxygen-excess silicon oxide (SiO_(X) (X>2)), the numberof oxygen atoms per unit volume is more than twice the number of siliconatoms per unit volume. The number of silicon atoms and the number ofoxygen atoms per unit volume are measured by Rutherford backscatteringspectrometry.

By supplying oxygen from the oxide insulating film to the oxidesemiconductor film, the interface state density at the interface betweenthe oxide insulating film and the oxide semiconductor film can bereduced. As a result, capture of electric charge which may be generateddue to operation of a transistor or the like at the interface betweenthe oxide insulating film and the oxide semiconductor film can besuppressed. Thus, it is possible to provide a transistor with lesselectrical characteristic deterioration, in which negative shift of thethreshold voltage can be reduced.

Further, electric charge may be generated owing to oxygen vacancies inthe oxide semiconductor film in some cases. In general, part of oxygenvacancies in the oxide semiconductor film serves as a donor to generatean electron that is a carrier. As a result, the threshold voltage of thetransistor shifts in the negative direction. This tendency is remarkablein an oxygen vacancy caused on the backchannel side. Note that the term“back channel” in this specification refers to the vicinity of aninterface on the oxide insulating film 102 side in the oxidesemiconductor region 119 in FIG. 1B. Sufficient release of oxygen fromthe oxide insulating film to the oxide semiconductor film can compensatefor oxygen vacancies in the oxide semiconductor film which is a cause ofnegative shift of the threshold voltage.

In other words, when oxygen vacancies are generated in the oxidesemiconductor film, it is difficult to suppress capture of electriccharge at the interface between the oxide insulating film and the oxidesemiconductor film. However, by providing an insulating film from whichoxygen is released by heat treatment as the oxide insulating film, theinterface state density between the oxide semiconductor film and theoxide insulating film and oxygen vacancies in the oxide semiconductorfilm can be reduced, and an influence of the capture of electric chargeat the interface between the oxide semiconductor film and the oxideinsulating film can be made small.

The oxide semiconductor film 120 is an oxide semiconductor filmincluding at least one element selected from In, Ga, Sn, and Zn.Typically, a four-component metal oxide such as an In—Sn—Ga—Zn—O-basedmetal oxide; a three-component metal oxide such as an In—Ga—Zn—O-basedmetal oxide, an In—Sn—Zn—O-based metal oxide, an In—Al—Zn—O-based metaloxide, a Sn—Ga—Zn—O-based metal oxide, an Al—Ga—Zn—O-based metal oxide,or a Sn—Al—Zn—O-based metal oxide; a two-component metal oxide such asan In—Zn—O-based metal oxide or a Sn—Zn—O-based metal oxide; aone-component metal oxide such as ZnO, SnO, or InO; or the like can beused for the oxide semiconductor film 120. Moreover, silicon oxide maybe included in the above oxide semiconductor. Here, for example, anIn—Ga—Zn—O-based material means an oxide material including indium (In),gallium (Ga), and zinc (Zn), and there is no particular limitation onthe composition ratio. The In—Ga—Zn—O-based material may further includean element other than indium, gallium, and zinc. Here, the amount ofoxygen in the above oxide semiconductor film preferably exceeds thestoichiometric proportion of oxygen. When the amount of oxygen exceedsthe stoichiometric proportion, generation of carriers which results fromoxygen vacancies in the oxide semiconductor film can be suppressed.

In the case where an In—Zn—O-based material is used as the oxidesemiconductor film, the atomic ratio thereof is In/Zn=0.5 to 50,preferably In/Zn=1 to 20, and further preferably In/Zn=1.5 to 15. Whenthe atomic ratio of In to Zn is in the above preferred range, thefield-effect mobility of a transistor can be improved. Here, when theatomic ratio of the compound is In:Zn:O=X:Y:Z, the relation Z>1.5X+Y issatisfied.

Note that the energy gap of a metal oxide which can form the oxidesemiconductor film 120 is 2 eV or more, preferably 2.5 eV or more,further preferably 3 eV or more. In this manner, the off-state currentof a transistor can be reduced by using an oxide semiconductor having awide energy gap.

The oxide semiconductor film 120 may have an amorphous structure.

The oxide semiconductor film 120 may be formed using anon-single-crystal material including a phase which has a triangular,hexagonal, regular triangular, or regular hexagonal atomic arrangementwhen seen from the direction perpendicular to the a-b plane and in whichmetal atoms are arranged in a layered manner or metal atoms and oxygenatoms are arranged in a layered manner when seen from the directionperpendicular to the c-axis, that is, a c-axis-aligned crystallinematerial.

The oxide semiconductor film 120 may contain nitrogen at a concentrationlower than or equal to 5×10¹⁸ atoms/cm³.

The concentration of alkali metals or alkaline earth metals in the oxidesemiconductor film 120 is preferably lower than or equal to 1×10¹⁸atoms/cm³, further preferably lower than or equal to 2×10¹⁶ atoms/cm³.When alkali metals or alkaline earth metals are bonded to an oxidesemiconductor, some of the alkali metals or the alkaline earth metalsgenerate carriers and cause an increase in the off-state current of thetransistor.

The concentration of hydrogen included in the oxide semiconductor film120 is preferably lower than 5×10¹⁸ atoms/cm³, further preferably lowerthan or equal to 1×10¹⁸ atoms/cm³, still further preferably lower thanor equal to 5×10¹⁷ atoms/cm³, and yet still further preferably lowerthan or equal to 1×10¹⁶ atoms/cm³. By a bond of an oxide semiconductorand hydrogen, part of contained hydrogen serves as a donor to generateelectrons as carriers. For that reason, by the reduction in theconcentration of hydrogen in the oxide semiconductor film, negativeshift of the threshold voltage can be reduced.

Here, an oxide semiconductor film having an amorphous structure isformed as the oxide semiconductor film 120.

The thickness of the oxide semiconductor film 120 is preferably morethan or equal to 1 nm and less than or equal to 50 nm, furtherpreferably more than or equal to 3 nm and less than or equal to 30 nm.

The pair of regions 115 and 117 containing a dopant is provided inregions which are not covered with the followings in the oxidesemiconductor film 120: the protective film 107, the pair of electrodes109, and the gate electrode 113. The pair of regions 115 and 117contains a Group 15 element such as nitrogen, phosphorus, or arsenic.The pair of regions 115 and 117 containing a dopant contains at leastone kind of dopant selected from hydrogen, helium, neon, argon, krypton,and xenon.

The concentration of the dopant in the pair of regions 115 and 117 ishigher than or equal to 5×10¹⁸ atoms/cm³ and lower than or equal to1×10²² atoms/cm³, preferably higher than or equal to 5×10¹⁸ atoms/cm³and lower than 5×10¹⁹ atoms/cm³.

Since the pair of regions 115 and 117 contains a dopant, the carrierdensity or the number of defects can be increased. Therefore, theconductivity can be higher than that of the oxide semiconductor region119 which does not contain a dopant. An excessive increase in the dopantconcentration causes inhibition of carrier movement by the dopant, whichleads to lower conductivity of the pair of regions 115 and 117containing a dopant.

The pair of regions 115 and 117 containing a dopant preferably has aconductivity higher than or equal to 10 S/cm and lower than or equal to1000 S/cm, preferably higher than or equal to 100 S/cm and lower than orequal to 1000 S/cm.

The existence of the pair of regions 115 and 117 containing a dopant inthe oxide semiconductor film 120 can relax an electric field applied toan end portion of the oxide semiconductor region 119 functioning as achannel region. Therefore, a short-channel effect of the transistor canbe suppressed.

At least one dopant of a Group 15 element such as nitrogen, phosphorus,or arsenic, hydrogen, helium, neon, argon, krypton, and xenon is notadded to a region covered with the pair of electrodes 109, the gateelectrode 113, or the protective film 107 in the oxide semiconductorfilm 120 (such as the oxide semiconductor regions 121 and 123) using anion doping method, an ion implantation method, a plasma treatmentmethod, or the like.

The protective film 107 can be formed using a single layer or stackedlayers of a silicon oxide film, a silicon oxynitride film, a siliconnitride oxide film, or a silicon nitride film. It is preferable that atleast a region of the protective film 107, which is in contact with theoxide semiconductor film 120, be formed of an oxide insulating film fromwhich oxygen is released by heat treatment, which is also used as theoxide insulating film 102.

The thickness of the protective film 107 is preferably more than orequal to 30 nm and less than or equal to 1000 nm, further preferablymore than or equal to 100 nm and less than or equal to 1000 nm; withsuch a thickness, addition of a dopant to the end portion of the oxidesemiconductor film 120 can be prevented and, moreover, an insulatingproperty between the oxide semiconductor film 120 and the pair ofelectrodes 109 can be kept. Further, when the length of a region wherethe protective film 107 covers a top surface of the end portion of theoxide semiconductor film 120 is 50 nm or less, preferably 20 nm or less,the side surface of the oxide semiconductor film 120 can be surelycovered by the protective film even if a mask is misaligned.

Because of the protective film 107 covering the end portion of the oxidesemiconductor film 120, the side surface of the oxide semiconductor film120 is not in contact with the pair of electrodes 109; therefore,generation of a leakage current in such a region can be suppressed.

The pair of electrodes 109 is formed to have a single-layer structure ora stacked-layer structure including, as a conductive material, any ofmetals such as aluminum, titanium, chromium, nickel, copper, yttrium,zirconium, molybdenum, silver, tantalum, and tungsten and an alloycontaining any of these metals as a main component. For example, asingle-layer structure of an aluminum film containing silicon, atwo-layer structure in which a titanium film is stacked over an aluminumfilm, a two-layer structure in which a titanium film is stacked over atungsten film, a two-layer structure in which a copper film is formedover a copper-magnesium-aluminum alloy film, and a three-layer structurein which a titanium film, an aluminum film, and a titanium film arestacked in this order can be given. Note that a transparent conductivematerial containing indium oxide, tin oxide, or zinc oxide may be used.Note that the pair of electrodes 109 also functions as a wiring.

The gate insulating film 111 may be formed using a single layer orstacked layers of, for example, silicon oxide, silicon oxynitride,silicon nitride oxide, silicon nitride, aluminum oxide, hafnium oxide,gallium oxide, or the like. The gate insulating film 111 may be an oxideinsulating film from which oxygen is released by heat treatment asdescribed as a film that can be used as the oxide insulating film 102.By using a film from which oxygen is released by heat treatment as thegate insulating film 111, oxygen vacancies caused in the oxidesemiconductor film can be reduced and deterioration of electriccharacteristics of the transistor can be suppressed.

When the gate insulating film 111 is formed using a high-k material suchas hafnium silicate (HfSiO_(x)), hafnium silicate to which nitrogen isadded (HfSi_(x)O_(y)N_(z)), hafnium aluminate to which nitrogen is added(HfAl_(x)O_(y)N_(z)), hafnium oxide, or yttrium oxide, gate leakagecurrent can be reduced.

The thickness of the gate insulating film 111 is preferably more than orequal to 1 nm and less than or equal to 300 nm, further preferably morethan or equal to 5 nm and less than or equal to 50 nm.

It is also possible that the gate insulating film 111 is formed onlyover the oxide semiconductor region 119 and does not cover the pair ofregions 115 and 117 containing a dopant.

The gate electrode 113 can be formed using a metal element selected fromaluminum, chromium, copper, tantalum, titanium, molybdenum, andtungsten, an alloy containing any of these metal elements as acomponent, an alloy containing any of these metal elements incombination, or the like. Further, one or more metal elements selectedfrom manganese or zirconium may be used. Further, the gate electrode 113may have a single-layer structure or a stacked-layer structure of two ormore layers. For example, a single-layer structure of an aluminum filmcontaining silicon, a two-layer structure in which a titanium film isstacked over an aluminum film, a two-layer structure in which a titaniumfilm is stacked over a titanium nitride film, a two-layer structure inwhich a tungsten film is stacked over a titanium nitride film, atwo-layer structure in which a tungsten film is stacked over a tantalumnitride film, a three-layer structure in which a titanium film, analuminum film, and a titanium film are stacked in this order, and thelike can be given. Alternatively, a film, an alloy film, or a nitridefilm which contains aluminum and one or more elements selected fromtitanium, tantalum, tungsten, molybdenum, chromium, neodymium, andscandium may be used.

The gate electrode 113 can be formed using a light-transmittingconductive material such as indium tin oxide, indium oxide containingtungsten oxide, indium zinc oxide containing tungsten oxide, indiumoxide containing titanium oxide, indium tin oxide containing titaniumoxide, indium zinc oxide, or indium tin oxide to which silicon oxide isadded. It is also possible to employ a stacked-layer structure of theabove-described light-transmitting conductive material and theabove-described metal element.

As a material layer in contact with the gate insulating film 111, anIn—Ga—Zn—O film containing nitrogen, an In—Sn—O film containingnitrogen, an In—Ga—O film containing nitrogen, an In—Zn—O filmcontaining nitrogen, an Sn—O film containing nitrogen, an In—O filmcontaining nitrogen, or a film of a metal nitride (such as InN or ZnN)is preferably provided between the gate electrode 113 and the gateinsulating film 111. These films each have a work function of higherthan or equal to 5 eV, preferably higher than or equal to 5.5 eV; thus,the threshold voltage in the electric characteristics of the transistorcan be positive. Accordingly, a so-called normally-off switching elementcan be obtained. For example, in the case of using an In—Ga—Zn—O filmcontaining nitrogen, an In—Ga—Zn—O film having at least a highernitrogen concentration than the oxide semiconductor film 120,specifically, an In—Ga—Zn—O film having a nitrogen concentration of 7at. % or higher is used.

The insulating film 125 may be formed to have a stacked-layer structureor a single-layer structure using, for example, a material such assilicon oxide, silicon oxynitride, silicon nitride oxide, or siliconnitride.

In the transistor described in this embodiment, since the end portion ofthe oxide semiconductor film 120 is covered with the protective film107, the dopant is not added to the region of the oxide semiconductorfilm 120, which is covered with the protective film 107. Thus,generation of a leakage current in the region can be suppressed.Further, since the pair of electrodes 109 does not overlap with the gateelectrode 113, parasitic capacitance between the pair of electrodes 109and the gate electrode 113 can be reduced. Therefore, high-speedoperation of the transistor can be achieved. Furthermore, the hydrogenconcentration in the oxide semiconductor film 120 is low; accordingly,electric characteristics and reliability of the transistor can beincreased.

Although a transistor in which opposite regions of the pair ofelectrodes 109 are linear has been used in this embodiment, the oppositeregions of the pair of electrodes 109 may be U-shaped or C-shaped asappropriate, for example. A transistor with such a structure can have anincreased channel width; accordingly, the on-state current can beincreased.

Next, a method for manufacturing the transistor in FIGS. 1A to 1D willbe described with reference to FIGS. 2A to 2E and FIGS. 3A to 3C.

As illustrated in FIG. 2A, the oxide insulating film 102 is formed overthe substrate 101. Then, an oxide semiconductor film 103 is formed overthe oxide insulating film 102.

The oxide insulating film 102 is formed by a sputtering method, a CVDmethod, or the like. It is preferable to use the oxide insulating filmfrom which part of oxygen is released by heat treatment because it iseasily formed by a sputtering method.

When the oxide insulating film from which part of oxygen is released byheat treatment is formed by a sputtering method, the amount of oxygen ina deposition gas is preferably large, and oxygen, a mixed gas of oxygenand a rare gas, or the like can be used. Typically, the oxygenconcentration of a deposition gas is preferably from 6% to 100%.

A silicon oxide film can be formed as a typical example of such an oxideinsulating film from which part of oxygen is released by heat treatment.In that case, the silicon oxide film is preferably formed by an RFsputtering method under the following conditions: quartz (preferablysynthetic quartz) is used as a target; the substrate temperature is from30° C. to 450° C. (preferably from 70° C. to 200° C.); the distancebetween the substrate and the target (the T-S distance) is from 20 mm to400 mm (preferably from 40 mm to 200 mm); the pressure is from 0.1 Pa to4 Pa (preferably from 0.2 Pa to 1.2 Pa), the high-frequency power isfrom 0.5 kW to 12 kW (preferably from 1 kW to 5 kW); and the proportionof oxygen in the deposition gas (O₂/(O₂+Ar)) is from 1% to 100%(preferably from 6% to 100%). Note that a silicon target may be used asthe target instead of the quartz (preferably synthetic quartz) target.In addition, oxygen alone may be used as the deposition gas.

The oxide semiconductor film 103 can be formed by a sputtering method, acoating method, a printing method, a pulsed laser deposition method, orthe like.

Here, the oxide semiconductor film 103 is formed by a sputtering methodto have a thickness more than or equal to 1 nm and less than or equal to50 nm, preferably more than or equal to 3 nm and less than or equal to30 nm.

Next, a sputtering apparatus used for forming the oxide semiconductorfilm will be described in detail below.

The leakage rate of a treatment chamber in which the oxide semiconductorfilm is formed is preferably lower than or equal to 1×10⁻¹⁰ Pa·m³/sec.,whereby entry of an impurity into the film formed by a sputtering methodcan be decreased.

In order to decrease the leakage rate, internal leakage as well asexternal leakage needs to be reduced. The external leakage refers toinflow of gas from the outside of a vacuum system through a minute hole,a sealing defect, or the like. The internal leakage is due to leakagethrough a partition, such as a valve, in a vacuum system or due toreleased gas from an internal member. Measures need to be taken fromboth aspects of external leakage and internal leakage in order that theleakage rate be lower than or equal to 1×10⁻¹⁰ Pa·m³/sec.

In order to reduce external leakage, an open/close portion of thetreatment chamber is preferably sealed with a metal gasket. For themetal gasket, a metal material covered with iron fluoride, aluminumoxide, or chromium oxide is preferably used. The metal gasket realizeshigher adhesion than an O-ring, and can reduce the external leakage.Further, by use of a metal material covered with iron fluoride, aluminumoxide, chromium oxide, or the like which is in the passive state,released gas containing hydrogen generated from the metal gasket issuppressed, so that the internal leakage can also be reduced.

As a member for forming an inner wall of the treatment chamber,aluminum, chromium, titanium, zirconium, nickel, or vanadium, from whichthe amount of a released gas containing hydrogen is small, is used. Analloy material containing iron, chromium, nickel, and the like coveredwith the above-mentioned material may be used. The alloy materialcontaining iron, chromium, nickel, and the like has stiffness and isresistant to heat and suitable for processing. Here, when surfaceunevenness of the member is decreased by polishing or the like to reducethe surface area, the released gas can be reduced. Alternatively, theabove-mentioned member of the film formation apparatus may be coveredwith iron fluoride, aluminum oxide, chromium oxide, or the like which isin the passive state.

Furthermore, it is preferable to provide a gas purifier for a sputteringgas just in front of the treatment chamber. At this time, the length ofa pipe between the gas purifier and the treatment chamber is less thanor equal to 5 m, preferably less than or equal to 1 m. When the lengthof the pipe is less than or equal to 5 m or less than or equal to 1 m,the effect of the released gas from the pipe can be reduced accordingly.

Evacuation of the treatment chamber is preferably performed with a roughvacuum pump such as a dry pump and a high vacuum pump such as a sputterion pump, a turbo molecular pump, or a cryopump in appropriatecombination. The turbo molecular pump has an outstanding capability inevacuating a large-sized molecule, whereas it has a low capability inevacuating hydrogen or water. Hence, a combination of a cryopump havinga high capability in evacuating water and a sputter ion pump having ahigh capability in evacuating hydrogen is effective.

An adsorbate present on the inner wall of the treatment chamber does notaffect the pressure in the treatment chamber because it is adsorbed onthe inner wall, but the adsorbate leads to release of gas at the time ofthe evacuation of the treatment chamber. Therefore, although the leakagerate and the evacuation rate do not have a correlation, it is importantthat the adsorbate present in the treatment chamber be desorbed as muchas possible and evacuation be performed in advance with use of a pumphaving high evacuation capability. Note that the treatment chamber maybe subjected to baking for promoting desorption of the adsorbate. By thebaking, the rate of desorption of the adsorbate can be increased abouttenfold. The baking may be performed at a temperature higher than orequal to 100° C. and lower than or equal to 450° C. At this time, whenthe adsorbate is removed while an inert gas is introduced, the rate ofdesorption of water or the like, which is difficult to desorb only byevacuation, can be further increased.

As described above, in the process for forming the oxide semiconductorfilm 103 and preferably in the process for forming the oxide insulatingfilm, entry of impurities is suppressed as much as possible throughcontrol of the pressure of the treatment chamber, leakage rate of thetreatment chamber, and the like, whereby entry of impurities includinghydrogen contained in the oxide semiconductor film can be reduced. Inaddition, diffusion of impurities such as hydrogen from the oxideinsulating film to the oxide semiconductor film can be reduced.

Hydrogen contained in the oxide semiconductor reacts with oxygen bondedto a metal atom to produce water, and in addition, a defect is formed ina lattice from which oxygen is released (or a portion from which oxygenis removed). Thus, the impurities containing hydrogen are reduced asmuch as possible in the formation step of the oxide semiconductor film,whereby defects in the oxide semiconductor film can be reduced.Therefore, when a channel region is formed in an oxide semiconductorfilm which is purified by removing impurities as much as possible, thetransistor can have higher reliability.

A power supply device for generating plasma in a sputtering method canbe an RF power supply device, an AC power supply device, a DC powersupply device, or the like as appropriate.

As a target, a metal oxide target containing zinc can be used. As thetarget, a four-component metal oxide such as an In—Sn—Ga—Zn—O-basedmetal oxide, a three-component metal oxide such as an In—Ga—Zn—O-basedmetal oxide, an In—Sn—Zn—O-based metal oxide, an In—Al—Zn—O-based metaloxide, a Sn—Ga—Zn—O-based metal oxide, an Al—Ga—Zn—O-based metal oxide,or a Sn—Al—Zn—O-based metal oxide, a two-component metal oxide such asan In—Zn—O-based metal oxide or a Sn—Zn—O-based metal oxide, or aone-component metal oxide such as a ZnO-based metal oxide or a SnO-basedmetal oxide can be used.

An example of the target is a metal oxide target containing In, Ga, andZn at a composition ratio of In₂O₃:Ga₂O₃:ZnO=1:1:1 [molar ratio].Alternatively, a target having a composition ratio ofIn₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio], a target having a composition ratioof In₂O₃:Ga₂O₃:ZnO=1:1:4 [molar ratio], or a target having a compositionratio of In₂O₃:Ga₂O₃:ZnO=2:1:8 [molar ratio] can be used. Alternatively,a target having a composition ratio of In₂O₃:ZnO=25:1 to 1:4 [molarratio] can be used.

As a sputtering gas, a rare gas (typically argon) atmosphere, an oxygenatmosphere, or a mixed gas of a rare gas and oxygen is used asappropriate. It is preferable that a high-purity gas from whichimpurities containing hydrogen are removed be used as a sputtering gas.

It is preferable that the oxide insulating film 102 and the oxidesemiconductor film 103 be formed successively. When the oxidesemiconductor film 103 is formed without being exposed to the air afterformation of the oxide insulating film 102, attachment of hydrogen atthe interface between the oxide insulating film 102 and the oxidesemiconductor film 103 can be reduced. Alternatively, a multi-chambersputtering apparatus having a heating apparatus may be employed in thefollowing manner: the oxide insulating film 102 is formed and heatedwith the heating apparatus so that hydrogen is released, and then theoxide semiconductor film 103 is formed over the oxide insulating film102.

Next, heat treatment is performed on the substrate 101, so that hydrogenis released from the oxide semiconductor film and part of oxygencontained in the oxide insulating film 102 is diffused into the oxidesemiconductor film 103 and the vicinity of the interface between theoxide insulating film 102 and the oxide semiconductor film 103. As aresult, as illustrated in FIG. 2B, an oxide semiconductor film 104 withreduced hydrogen concentration and reduced oxygen defects can be formed.

The temperature of the heat treatment is preferably a temperature atwhich hydrogen is released from the oxide semiconductor film and part ofoxygen contained in the oxide insulating film 102 is released anddiffused into the oxide semiconductor film. The temperature is typicallyhigher than or equal to 150° C. and lower than the strain point of thesubstrate, preferably higher than or equal to 250° C. and lower than orequal to 450° C., further preferably higher than or equal to 300° C. andlower than or equal to 450° C.

A rapid thermal annealing (RTA) apparatus can be used for the heattreatment. With the use of an RTA apparatus, heat treatment at atemperature higher than or equal to the strain point of the substratecan be performed only for a short time. Thus, the time during whichhydrogen is released from the oxide semiconductor film and the timeduring which oxygen is diffused from the oxide insulating film 102 intothe oxide semiconductor film 103 can be shortened.

The heat treatment can be performed in an inert gas atmosphere;typically it is preferably performed in a rare gas (such as helium,neon, argon, xenon, or krypton) atmosphere or a nitrogen atmosphere.Alternatively, the heat treatment may be performed in an oxygenatmosphere or a reduced-pressure atmosphere. The treatment time is fromthree minutes to 24 hours.

Oxygen vacancies in the oxide semiconductor film also serve as donors togenerate electrons that are carriers. The heat treatment is performed inthe state where the oxide insulating film 102 is covered with the oxidesemiconductor film 103, so that part of oxygen in the oxide insulatingfilm 102 is diffused into the oxide semiconductor film 103. Thus, oxygenvacancies of the oxide semiconductor film 103 can be reduced. Further,since the oxide insulating film 102 is covered with the oxidesemiconductor film 103 and a surface of the oxide insulating film 102 isnot exposed, the amount of oxygen released to the outside withoutdiffusing from the oxide insulating film 102 to the oxide semiconductorfilm 103 can be reduced. Accordingly, oxygen defects of the oxidesemiconductor film, the interface state density between the oxideinsulating film 102 and the oxide semiconductor film 103 can be reduced.

In the process for forming the oxide semiconductor film 103, entry ofimpurities is suppressed as much as possible through control of thepressure of the treatment chamber, leakage rate of the treatmentchamber, and the like, whereby entry of impurities including hydrogencontained in the oxide insulating film 102 and the oxide semiconductorfilm 103 can be reduced. Furthermore, diffusion of impurities containinghydrogen from the oxide insulating film 102 into the oxide semiconductorfilm 103 can be reduced. The hydrogen concentration in the oxidesemiconductor film 103 can be reduced by heat treatment. By a bond withhydrogen in an oxide semiconductor, part of hydrogen serves as a donorto generate electrons that are carriers. Thus, by reducing impurities,typically hydrogen, as much as possible in the formation step of theoxide semiconductor film and the subsequent heating step, defects in theoxide semiconductor film can be reduced.

Next, a mask is formed over the oxide semiconductor film 104, and thenthe oxide semiconductor film 104 is selectively etched with the use ofthe mask, so that an oxide semiconductor film 105 is formed (see FIG.2C).

The mask used in the etching of the oxide semiconductor film 104 can beformed as appropriate by a photolithography process, an inkjet method, aprinting method, or the like. Wet etching or dry etching may be employedas appropriate for the etching of the oxide semiconductor film. Then,the mask is removed. Note that when a stripping solution is used forremoving the mask, oxygen may be released from a side surface of theoxide semiconductor film 105 in some cases. Therefore, an ashing methodmay alternatively be used for removing the mask.

Next, as illustrated in FIG. 2D, an oxide insulating film 106 is formedover the oxide insulating film 102 and the oxide semiconductor film 105.The oxide insulating film 106 is formed using an oxide insulating filmfrom which part of oxygen is released by heat treatment in a mannersimilar to that of the oxide insulating film 102. As such an oxideinsulating film from which part of oxygen is released by heat treatment,an oxide insulating film containing oxygen at a proportion exceeding thestoichiometric proportion is preferably used.

As a formation method of the oxide insulating film 106, a formationmethod similar to that of the oxide insulating film 102 can be selectedas appropriate. Note that in forming the oxide insulating film 106, thefilm formation temperature of the oxide insulating film 106 ispreferably set to a lowest possible temperature and further preferablyset to a room temperature, in order to reduce the amount of oxygenreleased from the side surface of the oxide semiconductor film 105.

Note that even in the case where oxygen defects are generated at theside surface of the oxide semiconductor film 105 owing to the release ofoxygen, by using an oxide insulating film from which part of oxygen isreleased by heat as the oxide insulating film 106, oxygen defects at theside surface of the oxide semiconductor film 105 can be reduced by laterheat treatment.

Next, a mask is formed over the oxide insulating film 106, the oxideinsulating film 106 is selectively etched with the use of the mask, andthen the protective film 107 is formed. Then, the mask is removed (seeFIG. 2E). The protective film 107 covers at least the end portion of theoxide semiconductor film 105; therefore, the side surface of the oxidesemiconductor film 105 is not exposed to a reduced-pressure atmospherein a subsequent manufacturing process. In addition, a sidewall of theoxide semiconductor film 105 is not exposed to an etchant in a lateretching step. Consequently, the release of oxygen from the side surfaceof the oxide semiconductor film 105 and generation of oxygen defectsowing to the release can be prevented. Further, since the side surfaceof the oxide semiconductor film 105 is not in contact with the pair ofelectrodes 109, generation of a leakage current in a region in thevicinity of the side surface of the oxide semiconductor film 105 can besuppressed.

Next, as illustrated in FIG. 3A, the pair of electrodes 109 is formed bya printing method or an inkjet method. Alternatively, after a conductivefilm is formed by a sputtering method, a CVD method, an evaporationmethod or the like, a mask is formed over the conductive film and theconductive film is etched, and thereby the pair of electrodes 109 isformed. The mask formed over the conductive film can be formed by aprinting method, an inkjet method, or a photolithography method asappropriate. In the case of forming the pair of electrodes 109 with theuse of a mask, the mask is removed later.

Next, as illustrated in FIG. 3B, the gate insulating film 111 is formedover the oxide semiconductor film 105, the protective film 107, and thepair of electrodes 109, and then the gate electrode 113 is formed overthe gate insulating film 111.

The gate insulating film 111 may be formed using a thermal oxidationmethod, a CVD method, a sputtering method, or the like.

The gate electrode 113 is formed by a printing method or an inkjetmethod. Alternatively, after a conductive film is formed by a sputteringmethod, a CVD method, an evaporation method or the like, a mask isformed over the conductive film and the conductive film is etched, andthereby the gate electrode 113 is formed. The mask formed over theconductive film can be formed by a printing method, an inkjet method, ora photolithography method as appropriate. In the case of forming thegate electrode 113 with the use of a mask, the mask is removed later.

Next, treatment of adding a dopant to the oxide semiconductor film 105is conducted, so that regions 115 and 117 containing a dopant are formedas illustrated in FIG. 3C. By using the gate electrode 113 and the pairof electrodes 109 as masks in adding a dopant, the regions 115 and 117containing a dopant, into which the dopant is added, and the oxidesemiconductor regions 119, 121, and 123, into which a dopant is notadded, can be formed in a self-aligned manner. Note that the regions 115and 117 containing a dopant function as electric-field relaxationregions. The oxide semiconductor region 119, the pair of regions 115 and117 containing a dopant, and the pair of oxide semiconductor regions 121and 123 are collectively referred to as the oxide semiconductor film120.

As a method of adding a dopant to the oxide semiconductor film 105, anion doping method or an ion implantation method can be used. As a dopantfor addition, at least one element is selected from a Group 15 elementsuch as nitrogen, phosphorus, or arsenic, hydrogen, helium, neon, argon,krypton, and xenon. Here, the pair of electrodes 109 and the gateelectrode 113 are used as masks; accordingly, the regions 115 and 117containing a dopant, into which the dopant is added, the oxidesemiconductor region 119 which overlaps with the gate electrode 113 andis sandwiched between the regions 115 and 117 containing a dopant, andthe oxide semiconductor regions 121 and 123 which overlap with the pairof electrodes 109 and between which the regions 115 and 117 containing adopant are sandwiched, can be formed in a self-aligned manner.

In the embodiment describe here, the addition of the dopant to the oxidesemiconductor film 105 is conducted in a state where the oxidesemiconductor film 105 is covered with the insulating film and the like;alternatively, the addition of the dopant may be conducted in a statewhere the oxide semiconductor film 103 is exposed.

Further, the addition of the dopant may also be conducted using a methodother than injection methods such as an ion doping method and an ionimplantation method. For example, a dopant can be added in the followingmanner: plasma is generated in an atmosphere of a gas containing anelement to be added and plasma treatment is performed on an object towhich the dopant is added. A dry etching apparatus, a plasma CVDapparatus, a high-density plasma CVD apparatus, or the like can be usedto generate the plasma.

Next, the insulating film 125 is formed and heat treatment is performed.The insulating film 125 is formed by a thermal oxidation method, a CVDmethod, a sputtering method, or the like, for example. The temperatureof the heat treatment is typically higher than or equal to 150° C. andlower than or equal to 450° C., preferably higher than or equal to 250°C. and lower than or equal to 325° C. In the heat treatment, thetemperature may be gradually increased from 250° C. to 325° C.

By the heat treatment, oxygen is diffused from the protective film 107into the oxide semiconductor film 120, so that oxygen defects in theside surface of the oxide semiconductor film 120 can be reduced.Further, the resistance of the regions 115 and 117 containing a dopantcan be reduced. In the heat treatment, the regions 115 and 117containing a dopant may be in either a crystalline state or an amorphousstate.

Here, verification results on how easily oxygen vacancies are producedat a top surface and a side surface of an oxide semiconductor film,obtained through calculation using the following models, will bedescribed. Note that a CAAC oxide semiconductor is complicated tocalculate due to having a plurality of crystal planes on one sidesurface. Therefore, calculation was conducted here using a ZnO singlecrystal that has a wurtzite structure having c-axis alignment. Ascrystal models, the (001) plane, the (100) plane, and the (110) planeobtained by cutting the crystal structure along planes parallel to thec-axis and a plane perpendicular to the c-axis as shown in FIG. 27 wereused.

After making the surface structures, calculation of the cases in whichoxygen is released from the (100) plane, the (110) plane, and the (001)plane as shown in FIGS. 28A to 28C was conducted, and the easiness ofrelease was compared between the surface structures.

A model was made by cutting the crystal structure to have the (001)plane on the surface. Since the calculation was conducted using athree-dimensional periodic structure, the model was a slab model havingtwo (001) planes and having a vacuum region of 1 nm. Similarly, a slabmodel having the (100) plane on the surface and a slab model having the(110) plane on the surface were made as examples of the side surfacebecause the side surface is assumed to be perpendicular to the (001)plane. By calculating these two planes, a tendency to release oxygenfrom planes perpendicular to the (001) plane can be analyzed. In thiscase also, the vacuum region is 1 nm. The number of atoms in the (100)plane model, the (110) plane model, and the (001) plane model were setto be 64, 108, and 108, respectively. Further, structures which wereobtained by removing oxygen from the respective surfaces of the abovethree structures were made.

For the calculation, CASTEP, which is a program using the densityfunctional theory, was used. A plane wave basis pseudopotential methodwas used as a method for the density functional theory, and GGA-PBE wasused for a functional. First, in a four-atom unit cell of a wurtzitestructure, structural optimization including a lattice constant wasperformed. Next, based on the optimized structure, the surface structurewas made. Then, the surface structure with an oxygen vacancy and thesurface structure without an oxygen vacancy were subjected to structuraloptimization with a lattice constant fixed. Energy after the structuraloptimization was used.

The cut-off energy was assumed to be 380 eV in unit cell calculation and300 eV in surface structure calculation. The k-point grid size was 9×9×6in the unit cell calculation, 3×2×1 in the (100) plane modelcalculation, 1×2×2 in the (110) plane model calculation, and 2×2×1 inthe (001) plane model calculation.

The following calculation was performed on the above surface structuresto obtain an energy difference (here, referred to as a binding energy):the energy of the structure with an oxygen vacancy and half the energyof an oxygen molecule are added, and the energy of the structure withoutan oxygen vacancy is subtracted therefrom. Oxygen is more likely to bereleased on the surface having a lower binding energy.(Binding energy)=(Energy of the structure with an oxygen vacancy)+(Halfthe energy of an oxygen molecule)−(Energy of the structure without anoxygen vacancy)  [Formula 2]

Binding energies of the respective surfaces obtained according toFormula 2 are shown in Table 1.

TABLE 1 Binding energy (100) plane model 2.89 (110) plane model 2.64(001) plane model 3.38

From the result in Table 1, it can be said that binding energies of the(100) plane and the (110) plane are lower than that of the (001) planeand oxygen is more likely to be released from the (100) plane and the(110) plane than from the (001) plane. In other words, it can be foundthat oxygen is more likely to be released from the side surface than thetop surface of the ZnO film having c-axis alignment in a directionperpendicular to the top surface. Although ZnO which is an example ofCAAC oxide semiconductors has mixed various crystal planes, it has thesame kind of planes as a ZnO single crystal on its side surface.Therefore, it can be said that a tendency to release oxygen of the ZnOis similar to that of the ZnO single crystal.

When an oxide semiconductor film is selectively etched, for example whena side surface of an oxide semiconductor film is exposed to plasmaincluding chlorine radicals, fluorine radicals, or the like in dryetching, metal atoms exposed on the side surface of the oxidesemiconductor film are bonded with the chlorine radicals, the fluorineradicals, or the like. At this time, the bonds of the metal atoms andthe chlorine atoms or the fluorine atoms are released and consequentlyoxygen atoms which had been bonded with the metal atoms in the oxidesemiconductor film become active. The active oxygen atoms are easilyreacted and adsorbed. Thus, oxygen vacancies are likely to be generatedon the side surface of the oxide semiconductor film.

For these reasons, in the transistor described in this embodiment, afterthe oxide semiconductor film is formed over the oxide insulating filmfrom which part of oxygen is released by heat treatment, heat treatmentis performed. In this way, oxygen vacancies in the oxide semiconductorfilm can be reduced and the interface state density at the interfacebetween the oxide insulating film and the oxide semiconductor film canbe reduced. Further, an oxide insulating film from which part of oxygenis released by heat treatment is formed as the protective film whichcovers the end portion of the oxide semiconductor film that is formed byselective etching of the oxide semiconductor film. As a result, the sidesurface of the etched oxide semiconductor film is not exposed to areduced-pressure atmosphere and an etchant, so that oxygen vacanciesgenerated on the side surface of the oxide semiconductor film can bereduced. Furthermore, by subsequent heat treatment, oxygen is diffusedfrom the protective film into the oxide semiconductor film; accordingly,even when oxygen defects are generated at the side surface of the oxidesemiconductor film, the oxygen defects can be compensated for.Therefore, the negative shift of the threshold voltage of the transistorcan be reduced and, in addition, a leakage current between a source anda drain of the transistor can be reduced; accordingly, electricalcharacteristics of the transistor can be improved.

Embodiment 2

In this embodiment, a method for manufacturing the transistor of FIGS.1A to 1D, which is different from that described in Embodiment 1, willbe described with reference to FIGS. 3A to 3C and FIGS. 4A to 4D.

In a manner similar to that of Embodiment 1, the oxide insulating film102 is formed over the substrate 101 as illustrated in FIG. 4A. Next,the oxide semiconductor film 103 is formed over the oxide insulatingfilm 102. It is preferable that the oxide insulating film 102 and theoxide semiconductor film 103 be formed successively. A multi-chambersputtering apparatus having a heating apparatus may be employed in thefollowing manner: the oxide insulating film 102 is formed and heatedwith the heating apparatus so that hydrogen is released, and then theoxide semiconductor film 103 is formed over the oxide insulating film102.

Then, a mask is formed over the oxide semiconductor film 103, and theoxide semiconductor film 103 is selectively etched with the use of themask, so that an oxide semiconductor film 131 is formed. Then, the maskis removed. Next, the oxide insulating film 106 is formed over the oxidesemiconductor film 131 (see FIG. 4B). The oxide insulating film 102 andthe oxide insulating film 106 are each formed using an oxide insulatingfilm from which part of oxygen is released by heat treatment. As such anoxide insulating film from which part of oxygen is released by heattreatment, an oxide insulating film containing oxygen at a proportionexceeding the stoichiometric proportion is preferably used.

Next, heat treatment is performed on the substrate 101, so that hydrogenis released from the oxide semiconductor film 131 and part of oxygencontained in the oxide insulating film 102 and the oxide insulating film106 is diffused into the oxide semiconductor film 131 and the vicinityof the interface with the oxide semiconductor film 131 in the oxideinsulating films 102 and 106. As a result, as illustrated in FIG. 4C,the oxide semiconductor film 105 with reduced hydrogen concentration andreduced oxygen defects can be formed.

This embodiment is different from Embodiment 1 in that oxygen isdiffused from the oxide insulating film 102 and the oxide insulatingfilm 106 into the oxide semiconductor film 131. In this embodiment, notonly a top surface of the oxide semiconductor film 131 but also a sidesurface of the oxide semiconductor film 131 is covered with the oxideinsulating film 106. Accordingly, by the heat treatment, oxygen defectsin the oxide semiconductor film 131 can be reduced and the interfacestate density at the interface between the oxide semiconductor film 131and the oxide insulating films 102 and 106 can be reduced. In addition,oxygen is supplied to oxygen defects in the side surface of the oxidesemiconductor film 131; accordingly, even when oxygen defects aregenerated in the side surface of the oxide semiconductor film 131, theoxygen defects can be compensated for.

In the case where a blocking film is provided over the oxide insulatingfilm 106, oxygen can be prevented from being released to the outsidefrom the oxide insulating film 106 in the heat treatment. As theblocking film, a silicon nitride film, a silicon nitride oxide film, analuminum oxide film, an aluminum nitride film, an aluminum oxynitridefilm, an aluminum nitride oxide film, a diamond-like carbon film, or thelike can be used.

Next, a mask is formed over the oxide insulating film 106, the oxideinsulating film 106 is selectively etched with the use of the mask, andthen the protective film 107 is formed (see FIG. 4D). The protectivefilm 107 covers at least the end portion of the oxide semiconductor film105; therefore, the side surface of the oxide semiconductor film 105 isnot exposed to a reduced-pressure atmosphere in a subsequentmanufacturing process. In addition, a sidewall of the oxidesemiconductor film 105 is not exposed to an etchant in a later etchingstep. Consequently, the release of oxygen from the side surface of theoxide semiconductor film 105 and generation of oxygen defects owing tothe release can be prevented. Further, since the side surface of theoxide semiconductor film 105 is not in contact with the pair ofelectrodes 109, generation of a leakage current in a region in thevicinity of the side surface of the oxide semiconductor film 105 can besuppressed.

Then, through the process in FIGS. 3A to 3C, a transistor similar tothat of FIGS. 1A to 1D, in which the negative shift of the thresholdvoltage is reduced and a leakage current between a source and a drain isreduced, can be manufactured.

Embodiment 3

In this embodiment, a method for manufacturing a transistor, which isdifferent from those described in Embodiment 1 and Embodiment 2, will bedescribed with reference to FIGS. 3A to 3C, FIGS. 5A to 5C, and FIG. 6.This embodiment will be described as another embodiment of the methodfor manufacturing a transistor in Embodiment 1; however, Embodiment 2can be applied to this embodiment as appropriate. FIG. 6 is a top viewillustrating a formation step of an insulating film 145, and FIG. 5A isa cross-sectional view taken along a dashed-dotted line A-B in FIG. 6.

In a manner similar to that of Embodiment 1, after the process of FIGS.2A to 2D, as illustrated in FIG. 5A and FIG. 6, an insulating film 145having an opening 141 and an opening 143 is formed. Next, as illustratedin FIG. 5B, a conductive film 147 is formed over the oxide semiconductorfilm 105 and the insulating film 145. The conductive film 147 can beformed as appropriate using a material and a formation method which aresimilar to those of the pair of electrodes 109 described in Embodiment1.

Next, in a manner similar to that of Embodiment 1, a mask is formed overthe conductive film 147 and the conductive film 147 is selectivelyetched with the use of the mask, so that the pair of electrodes 109 isformed. Next, the insulating film 145 is etched so as to cover the endportion of the oxide semiconductor film 105, so that the protective film107 is formed. Through the above-described process, the protective film107 which covers the end portion of the oxide semiconductor film 105 andthe pair of electrodes 109 in contact with the oxide semiconductor film105 can be formed. The protective film 107 covers the end portion of theoxide semiconductor film 105; therefore, the side surface of the oxidesemiconductor film 105 is not exposed to a reduced-pressure atmospherein a subsequent manufacturing process. In addition, a sidewall of theoxide semiconductor film 105 is not exposed to an etchant in a lateretching step. Consequently, the release of oxygen from the side surfaceof the oxide semiconductor film 105 and generation of oxygen defectsowing to the release can be prevented. Further, since the side surfaceof the oxide semiconductor film 105 is not in contact with the pair ofelectrodes 109, generation of a leakage current in a region in thevicinity of the side surface of the oxide semiconductor film 105 can besuppressed.

Then, through the process in FIGS. 3A to 3C in a manner similar to thatof Embodiment 1, a transistor, in which the negative shift of thethreshold voltage is reduced and a leakage current between a source anda drain is reduced, can be manufactured.

Embodiment 4

In this embodiment, a structure of a transistor having a structuredifferent from that of Embodiments 1 and 2 and a method formanufacturing the transistor will be described with reference to FIGS.2A to 2E, FIGS. 3A to 3C, FIGS. 7A and 7B, and FIGS. 8A to 8C. Thisembodiment will be described as another embodiment of the method formanufacturing a transistor in Embodiment 1; however, this embodiment canbe applied to Embodiment 2 as appropriate.

FIGS. 7A and 7B are a top view and a cross-sectional view, respectively,of a transistor of this embodiment. FIG. 7A is the top view of thetransistor of this embodiment, and FIG. 7B is the cross-sectional viewtaken along a dashed-dotted line E-F in FIG. 7A. Note that in FIG. 7A,some of components of the transistor (e.g., an insulating film 153 andthe like) are not shown for simplicity.

The transistor illustrated in FIGS. 7A and 7B includes the oxideinsulating film 102 provided over the substrate 101, the oxidesemiconductor film 120 provided over the oxide insulating film 102, aprotective film 150 which covers the end portion of the oxidesemiconductor film 120 and part of which functions as a gate insulatingfilm, the pair of electrodes 109 formed over the protective film 150 andin contact with the oxide semiconductor film 120, and a gate electrode151 which is located over the protective film 150 and overlaps with theoxide semiconductor film 120. In addition, the insulating film 153 whichcovers the pair of electrodes 109, the oxide semiconductor film 120, theprotective film 150, and the gate electrode 151 is included. Further, inopenings provided in the insulating film 153, a pair of wirings 155connected to the pair of electrodes 109 is included. The oxidesemiconductor film 120 includes the oxide semiconductor region 119overlapping with the gate electrode 151, the pair of regions 115 and 117containing a dopant between which the oxide semiconductor region 119 issandwiched, and the pair of oxide semiconductor regions 121 and 123between which the pair of regions 115 and 117 containing a dopant issandwiched and which is in contact with the pair of electrodes 109. Notethat the pair of regions 115 and 117 containing a dopant functions aselectric-field relaxation regions, and the pair of oxide semiconductorregions 121 and 123 functions as a source region and a drain region.

In this embodiment, the protective film 150 covers the end portion ofthe oxide semiconductor film 120 and is used as a gate insulating film.As a result, the number of steps can be reduced. Since the gateelectrode 151 and the pair of electrodes 109 are formed from the samelayer, the pair of wirings 155 that is electrically connected to thepair of electrodes 109 and a scan line part of which is the gateelectrode 151 are arranged to intersect with each other with theinsulating film 153 interposed therebetween, in order that the scan linepart of which is the gate electrode 151 is not in contact with a signalline connected to the pair of electrodes 109.

Next, a method for manufacturing the transistor in FIGS. 7A and 7B willbe described with reference to FIGS. 2A to 2E, FIGS. 3A to 3C, and FIGS.8A to 8C.

In a manner similar to that of Embodiment 1, after the process of FIGS.2A to 2D, as illustrated in FIG. 8A, an insulating film 145 havingopenings is formed. Then, the conductive film 147 is formed over theoxide semiconductor film 105 and the insulating film 145.

Next, a mask is formed over the conductive film 147 and the conductivefilm 147 is selectively etched with the use of the mask, so that thepair of electrodes 109 and the gate electrode 151 are formed. Then, themask is removed. Next, a mask is formed over the pair of electrodes 109,the insulating film 145, and the gate electrode 151, and then theinsulating film 145 in a region which is covered with neither the pairof electrodes 109 nor the gate electrode 151 is etched so that theinsulating film 145 covers the end portion of the oxide semiconductorfilm 105. Thus, the protective film 150 which covers the end portion ofthe oxide semiconductor film 105 and functions as a gate insulating filmis formed. Then, the mask is removed.

Next, through a process similar to that of Embodiment 1, by the stepillustrated in FIG. 3C, treatment of adding a dopant to the oxidesemiconductor film 105 is conducted, so that regions 115 and 117containing a dopant are formed. By using the gate electrode 151 and thepair of electrodes 109 as masks in adding a dopant, the regions 115 and117 containing a dopant, into which the dopant is added, and the oxidesemiconductor regions 119, 121, and 123, into which a dopant is notadded, can be formed in a self-aligned manner. Note that the regions 115and 117 containing a dopant function as electric-field relaxationregions. The oxide semiconductor region 119, the pair of regions 115 and117 containing a dopant, and the pair of oxide semiconductor regions 121and 123 are collectively referred to as the oxide semiconductor film120.

Next, the insulating film 153 is formed over the oxide semiconductorfilm 120, the pair of electrodes 109, the protective film 150, and thena mask is formed over the insulating film 153, and the insulating film153 is selectively etched to form openings. Then, the mask is removed.Next, the pair of wirings 155 which is in contact with the pair ofelectrodes 109 is formed in the openings, and heat treatment isperformed (see FIG. 8C). By the heat treatment, oxygen is diffused fromthe protective film 150 into the oxide semiconductor film 120, so thatoxygen defects in the side surface of the oxide semiconductor film 120can be reduced. Further, the resistance of the regions 115 and 117containing a dopant can be reduced. In the heat treatment, the regions115 and 117 containing a dopant may be in either a crystalline state oran amorphous state.

The insulating film 153 can be formed as appropriate using a materialand a formation method which are similar to those of the insulating film125 described in Embodiment 1. The insulating film 153 may be formedusing an organic resin such as polyimide, an acrylic resin, or an epoxyresin.

The pair of wirings 155 can be formed using a material and a formationmethod which are similar to those of the pair of electrodes 109.

Through the above-described process, a transistor as illustrated inFIGS. 7A and 7B, in which the negative shift of the threshold voltage isreduced and a leakage current between a source and a drain is reduced,can be manufactured.

Embodiment 5

In this embodiment, a transistor having a structure different from thoseof Embodiments 1 to 4 and a method for manufacturing the transistor willbe described with reference to FIGS. 9A to 9C, FIGS. 10A to 10D, andFIGS. 11A to 11D.

FIGS. 9A to 9C are a top view and cross-sectional views of a transistordescribed in this embodiment. FIG. 9A is the top view of the transistordescribed in this embodiment, FIG. 9B is the cross-sectional view takenalong a dashed-dotted line G-H in FIG. 9A, and FIG. 9C is thecross-sectional view taken along a dashed-dotted line I-J in FIG. 9A. InFIG. 9A, some of components of the transistor (e.g., a gate insulatingfilm 211, an insulating film 225, and the like) are not shown forsimplicity.

The transistor illustrated in FIG. 9A includes the oxide insulating film102 provided over the substrate 101, an oxide semiconductor film 220provided over the oxide insulating film 102, a pair of electrodes 209 incontact with the oxide semiconductor film 220, a protective film 207which covers an end portion of the oxide semiconductor film 220 and alsocovers part of the pair of electrodes 209, the gate insulating film 211which covers the protective film 207, the pair of electrodes 209, andthe oxide semiconductor film 220, and a gate electrode 213 which islocated over the gate insulating film 211 and overlaps with the oxidesemiconductor film 220. In addition, the insulating film 225 whichcovers the gate insulating film 211 and the gate electrode 213 may beincluded. The oxide semiconductor film 220 includes an oxidesemiconductor region 219 overlapping with the gate electrode 213, a pairof regions 215 and 217 containing a dopant between which the oxidesemiconductor region 219 is sandwiched, and a pair of oxidesemiconductor regions 221 and 223 between which the pair of regions 215and 217 containing a dopant is sandwiched and which is in contact withthe pair of electrodes 209. Note that the oxide semiconductor region 219functions as a channel region, the pair of regions 215 and 217containing a dopant functions as electric-field relaxation regions, andthe pair of oxide semiconductor regions 221 and 223 functions as asource region and a drain region.

Note that the oxide semiconductor film 220, the pair of electrodes 209,the protective film 207, the gate insulating film 211, the gateelectrode 213, and the insulating film 225 can be formed using materialssimilar to those of the oxide semiconductor film 120, the pair ofelectrodes 109, the protective film 107, the gate insulating film 111,the gate electrode 113, and the insulating film 125 described inEmbodiment 1, respectively. In addition, the oxide semiconductor region219, the pair of regions 215 and 217 containing a dopant, and the pairof oxide semiconductor regions 221 and 223 can be formed using materialssimilar to those of the oxide semiconductor region 119, the pair ofregions 115 and 117 containing a dopant, and the pair of oxidesemiconductor regions 121 and 123 described in Embodiment 1,respectively.

Next, a method for manufacturing the transistor illustrated in FIGS. 9Ato 9C will be described with reference to FIGS. 10A to 10D and FIGS. 11Ato 11D.

In a manner similar to that of Embodiment 1, the oxide insulating film102 is formed over the substrate 101 as illustrated in FIG. 10A. Next,the oxide semiconductor film 103 is formed over the oxide insulatingfilm 102. It is preferable that the oxide insulating film 102 and theoxide semiconductor film 103 be formed successively. A multi-chambersputtering apparatus having a heating apparatus may be employed in thefollowing manner: the oxide insulating film 102 is formed and heatedwith the heating apparatus so that hydrogen is released and the oxidesemiconductor film 103 is formed over the oxide insulating film 102.

Next, heat treatment is performed on the substrate 101, so that hydrogenis released from the oxide semiconductor film and part of oxygencontained in the oxide insulating film 102 is diffused into the oxidesemiconductor film and the vicinity of the interface with the oxidesemiconductor film in the oxide insulating film 102. As a result, asillustrated in FIG. 10B, an oxide semiconductor film 104 with reducedhydrogen concentration and reduced oxygen defects can be formed.

Next, as illustrated in FIG. 10C, the pair of electrodes 209 is formedover the oxide semiconductor film 104. The pair of electrodes 209 can beformed in a manner similar to that of the pair of electrodes 109described in Embodiment 1.

In this embodiment, after the oxide semiconductor film 103 is formedover the oxide insulating film 102, the heat treatment is performed todiffuse part of oxygen contained in the oxide insulating film 102 intothe oxide semiconductor film and the vicinity of the interface with theoxide semiconductor film in the oxide insulating film 102; however, theheat treatment may be performed after a conductive film for forming theabove-described pair of electrodes 209 is formed.

Next, a mask is formed over the oxide semiconductor film 104 and thepair of electrodes 209, and the oxide semiconductor film 104 isselectively etched, so that an oxide semiconductor film 205 is formed(see FIG. 10D). Through the above-described process, the oxidesemiconductor film 205 which overlaps with the pair of electrodes 209and part of which is exposed can be formed as shown by the oxidesemiconductor film 220 in FIG. 9A. Then, the mask is removed. Note thatwhen a stripping solution is used for removing the mask, oxygen may bereleased from a side surface of the oxide semiconductor film 205 in somecases. Therefore, an ashing method may alternatively be used forremoving the mask.

Next, as illustrated in FIG. 11A, an oxide insulating film 206 is formedover the oxide semiconductor film 205 and the pair of electrodes 209.The oxide insulating film 206 is formed using an oxide insulating filmfrom which part of oxygen is released by heat, in a manner similar tothat of the oxide insulating film 106 described in Embodiment 1. As theoxide insulating film from which part of oxygen is released by heattreatment, an oxide insulating film containing oxygen at a proportionexceeding the stoichiometric proportion is preferably used.

Even in the case where oxygen defects are generated in the side surfaceof the oxide semiconductor film 205 owing to the release of oxygen, byusing an oxide insulating film from which part of oxygen is released byheat as the oxide insulating film 206, oxygen defects at the sidesurface of the oxide semiconductor film 205 can be reduced by later heattreatment.

Next, a mask is formed over the oxide insulating film 206, the oxideinsulating film 206 is selectively etched with the use of the mask, andthen the protective film 207 is formed. Then, the mask is removed (seeFIG. 11B). Through the process, the protective film 207 which coverspart of the pair of electrodes 209 and an exposed end portion of theoxide semiconductor film 205, which is not covered by the pair ofelectrodes 209, can be formed. Thus, the side surface of the oxidesemiconductor film 205 is not exposed to a reduced-pressure atmospherein a subsequent manufacturing process. In addition, a sidewall of theoxide semiconductor film 205 is not exposed to an etchant in a lateretching step. Furthermore, since the oxide semiconductor film 104 isetched to form the oxide semiconductor film 205 after the pair ofelectrodes is formed, and then the insulating film covering the sidesurface of the oxide semiconductor film 205 is formed, the oxidesemiconductor film overlapping with the pair of electrodes is formed.Consequently, the release of oxygen from the side surface of the oxidesemiconductor film 205 and generation of oxygen defects owing to therelease can be prevented. Further, since the side surface of the oxidesemiconductor film 205 is not in contact with the pair of electrodes209, generation of a leakage current in a region in the vicinity of theside surface of the oxide semiconductor film 205 can be suppressed.

Next, as illustrated in FIG. 11C, the gate insulating film 211 is formedover the oxide semiconductor film 205, the protective film 207, and thepair of electrodes 209 in a manner similar to that of Embodiment 1, andthe gate electrode 213 is formed over the gate insulating film 211.

Next, treatment of adding a dopant to the oxide semiconductor film 205is conducted, so that regions 215 and 217 containing a dopant are formedas illustrated in FIG. 11D. By using the gate electrode 213 and the pairof electrodes 209 as masks in adding a dopant, the regions 215 and 217containing a dopant, into which the dopant is added, and the oxidesemiconductor regions 219, 221, and 223, into which a dopant is notadded, can be formed in a self-aligned manner. Note that the regions 215and 217 containing a dopant function as electric-field relaxationregions.

Next, the insulating film 225 is formed and heat treatment is performed.By the heat treatment, oxygen is diffused from the protective film 207into the oxide semiconductor film 205, so that oxygen defects in theside surface of the oxide semiconductor film can be reduced. Further,the release of oxygen from the oxide semiconductor film 205 can bereduced, and the resistance of the regions 215 and 217 containing adopant can be reduced. In the heat treatment, the regions 215 and 217containing a dopant may be in either a crystalline state or an amorphousstate.

Through the above-described process, a transistor as illustrated inFIGS. 9A to 9C, in which the negative shift of the threshold voltage isreduced and a leakage current between a source and a drain is reduced,can be manufactured.

Embodiment 6

In this embodiment, a transistor having a structure different from thoseof Embodiments 1 to 5 will be described with reference to FIG. 12.

A cross-sectional structure of a transistor described in this embodimentwill be described with reference to FIG. 12.

The transistor in FIG. 12 includes the oxide insulating film 102provided over the substrate 101, one electrode 161 of a pair ofelectrodes provided over the oxide insulating film 102, an oxidesemiconductor film 163 in contact with the one electrode 161 of the pairof electrodes, a protective film 165 which covers an end portion of theoxide semiconductor film 163 and part of the one electrode 161 of thepair of electrodes, the other electrode 167 of the pair of electrodeswhich is formed over the protective film 165 and is in contact with theoxide semiconductor film 163, a gate insulating film 169 which coversthe protective film 165, the oxide semiconductor film 163, and the otherelectrode 167 of the pair of electrodes, and a gate electrode 171 whichoverlaps with the oxide semiconductor film 163 with the gate insulatingfilm 169 interposed therebetween. An insulating film 173 covering thegate insulating film 169 and the gate electrode 171 may be included.

The oxide semiconductor film 163 includes an oxide semiconductor region175 overlapping with the gate electrode 171, a pair of regions 177 and179 containing a dopant between which the oxide semiconductor region 175is sandwiched, and a pair of oxide semiconductor regions 181 and 183between which the pair of regions 177 and 179 containing a dopant issandwiched and which is in contact with the one electrode 161 and theother electrode 167 of the pair of electrodes. The oxide semiconductorregion 175 functions as a channel region, the pair of regions 177 and179 containing a dopant functions as electric-field relaxation regions,and the pair of oxide semiconductor regions 181 and 183 functions as asource region and a drain region.

Next, a manufacturing method of the transistor described in thisembodiment will be described below. This embodiment will be described asan application mode of the method for manufacturing a transistor inEmbodiment 1; however, this embodiment can be applied to any ofEmbodiments 2 to 5 as appropriate.

In the transistor described in this embodiment, the one electrode 161 ofthe pair of electrodes is formed before the oxide semiconductor film 103is formed over the oxide insulating film 102. Next, through a processsimilar to that of Embodiment 1, the protective film 165 is formed overthe selectively etched oxide semiconductor film, and the other electrode167 of the pair of electrodes is formed. Then, in a manner similar tothat of Embodiment 1, the gate insulating film 169 and the gateelectrode 171 are formed. Next, a dopant is added with the use of thegate electrode, the protective film 165, and the other electrode 167 ofthe pair of electrodes as masks, so that the oxide semiconductor film163 including the oxide semiconductor region 175, the pair of regions177 and 179 containing a dopant, and the pair of oxide semiconductorregions 181 and 183 can be formed. After the insulating film 173 isformed, heat treatment may be performed in a manner similar to that ofEmbodiment 1.

Through the above-described process, the transistor illustrated in FIG.12 can be manufactured.

Embodiment 7

In this embodiment, a method for forming a protective film, which isdifferent from those described in Embodiments 1 to 6, will be describedwith reference to FIGS. 13A to 13D.

As illustrated in FIG. 13A, the oxide insulating film 102 is formed overthe substrate 101. Next, an oxide insulating film 191 that is to be aprotective film later is formed over the oxide insulating film 102. Theoxide insulating film 191 is formed so that the oxide insulating film102 is exposed in a region where an oxide semiconductor film 197 formedlater as illustrated in FIG. 13D is to be located.

The oxide insulating film 191 is formed using an oxide insulating filmfrom which part of oxygen is released by heat in a manner similar tothat of the oxide insulating film 102. As such an oxide insulating filmfrom which part of oxygen is released by heat treatment, an oxideinsulating film containing oxygen at a proportion exceeding thestoichiometric proportion is preferably used.

As illustrated in FIG. 13B, an oxide semiconductor film 192 is formedover the oxide insulating film 102 and the oxide insulating film 191.Then, in a manner similar to that of Embodiment 1, heat treatment isperformed to release hydrogen from the oxide semiconductor film 192 anddiffuse part of oxygen contained in the oxide insulating film 102 andthe oxide insulating film 191 into the oxide semiconductor film 192 andthe vicinity of the interface with the oxide semiconductor film 192 inthe oxide insulating film 102 and the oxide insulating film 191. As aresult, as illustrated in FIG. 13C, an oxide semiconductor film 193 withreduced hydrogen concentration and reduced oxygen defects can be formed(see FIG. 13C).

Next, at least the oxide semiconductor film 193 is polished;accordingly, without being influenced by the thickness of the oxideinsulating film 191, an oxide semiconductor film 197 having a flatsurface and a protective film 195 having a thickness similar to that ofthe oxide semiconductor film 197 and a level of surface flatness similarto that of the oxide semiconductor film 197 can be formed. Since a sidesurface of the oxide semiconductor film 197 is in contact with theprotective film 195 which is an oxide insulating film from which part ofoxygen is released by heat treatment, even if the side surface of theoxide semiconductor film 197 includes oxygen defects, the oxygen defectscan be compensated for by later heat treatment.

As a result, the oxide semiconductor film whose surface unevenness islittle different from that of the protective film and which has a sidesurface with reduced oxygen defects can be formed. Accordingly, thethickness of a gate insulating film that is to be formed over the oxidesemiconductor film 197 can be made small. Further, processing accuracyof a gate electrode that is formed later can be enhanced. In thisembodiment, as a method for supplying oxygen from the oxide insulatingfilm 102 to the oxide semiconductor film, the method described inEmbodiment 1 is used. However, in a manner similar to that of Embodiment2, after an oxide insulating film is formed over the oxide semiconductorfilm 192, heat treatment may be performed to supply oxygen from theoxide insulating film provided over the oxide semiconductor film 192 tothe oxide semiconductor film 192, and then a projection portion of theoxide semiconductor film 192 and a projection portion of the oxideinsulating film over the oxide semiconductor film 192 may be etched.Thus, an oxide semiconductor film whose surface unevenness is littledifferent from that of the protective film and which has a side surfacewith reduced oxygen defects can be formed.

Embodiment 8

In this embodiment, a method for forming the oxide semiconductor films103 and 192 described in Embodiments 1 to 7 using a CAAC oxidesemiconductor will be described. Here, description will be made usingthe oxide semiconductor film 103 as an example.

The first method for forming the oxide semiconductor film 103 using aCAAC oxide semiconductor will be described below.

In the case where a sputtering method is employed in the method forforming the oxide semiconductor film 103 described in Embodiment 1 informing the oxide semiconductor film 103 using a CAAC oxidesemiconductor, the substrate temperature is set to be higher than orequal to 150° C. and lower than or equal to 450° C., preferably higherthan or equal to 200° C. and lower than or equal to 350° C., so thatentry of moisture (including hydrogen) to the oxide semiconductor filmcan be prevented and a CAAC oxide semiconductor including crystals canbe formed.

Heat treatment after the oxide semiconductor film 103 is formed using aCAAC oxide semiconductor by the above-described method releases furtherhydrogen from the oxide semiconductor film 103, can diffuse part ofoxygen contained in the oxide insulating film 102 into the oxidesemiconductor film 103 and the vicinity of the interface between theoxide insulating film 102 and the oxide semiconductor film 103, and canfurther form the oxide semiconductor film 104 including a CAAC oxidesemiconductor with a high crystallinity.

Next, the second method for forming the oxide semiconductor film 103using a CAAC oxide semiconductor will be described.

A first oxide semiconductor film is formed over the oxide insulatingfilm 102. The thickness of the first oxide semiconductor film is morethan or equal to a thickness of one atomic layer and less than or equalto 10 nm, preferably more than or equal to 2 nm and less than or equalto 5 nm.

When the first oxide semiconductor film is formed, the substratetemperature is set to be higher than or equal to 150° C. and lower thanor equal to 450° C., preferably higher than or equal to 200° C. andlower than or equal to 350° C. As a result, entry of impurities such asmoisture (including hydrogen) contained in the formed first oxidesemiconductor film can be reduced. Further, crystallinity of the firstoxide semiconductor film can be improved; accordingly, an oxidesemiconductor film of a CAAC oxide semiconductor with high orientationcan be formed.

After the first oxide semiconductor film is formed, first heat treatmentmay be performed. By the first heat treatment, moisture (includinghydrogen) can be further released from the first oxide semiconductorfilm; accordingly, crystallinity can be further increased. By the firstheat treatment, a CAAC oxide semiconductor with high orientation can beformed. The first heat treatment is performed at a temperature higherthan or equal to 200° C. and lower than the strain point of thesubstrate, preferably higher than or equal to 250° C. and lower than orequal to 450° C.

For the first heat treatment, a rapid thermal anneal (RTA) apparatus canbe used. With the use of the RTA apparatus, only in a short time, theheat treatment can be performed at a temperature higher than or equal tothe strain point of the substrate. Thus, the time required for formationof the oxide semiconductor film in which the ratio of a crystallineregion to an amorphous region is high can be shortened.

The first heat treatment can be performed in an inert gas atmosphere;typically it is preferably performed in a rare gas (such as helium,neon, argon, xenon, or krypton) atmosphere or a nitrogen atmosphere. Thefirst heat treatment may be performed in an oxygen atmosphere or areduced-pressure atmosphere. The treatment time is from 3 minutes to 24hours. As the treatment time is increased, the proportion of acrystalline region with respect to that of an amorphous region in theoxide semiconductor film can be increased. Note that heat treatment forlonger than 24 hours is not preferable because the productivity isreduced.

Next, a second oxide semiconductor film is formed over the first oxidesemiconductor film. The second oxide semiconductor film can be formed ina manner similar to that of the first oxide semiconductor film.

When the second oxide semiconductor film is formed with the substratebeing heated, the second oxide semiconductor film can be crystallizedusing the first oxide semiconductor film as a seed crystal. At thistime, the formation of the first oxide semiconductor film and the secondoxide semiconductor film both including the same element is referred toas “homoepitaxial growth”. The formation of the first oxidesemiconductor film and the second oxide semiconductor film including atleast one different element from each other is referred to as“heteroepitaxial growth”.

After the second oxide semiconductor film is formed, second heattreatment may be performed. The second heat treatment may be performedusing a method similar to that of the first heat treatment. By thesecond heat treatment, an oxide semiconductor film in which theproportion of a crystalline region is higher than that of an amorphousregion can be formed. By the second heat treatment, the second oxidesemiconductor film can be crystallized using the first oxidesemiconductor film as a seed crystal. At this time, homoepitaxial growthcausing the formation of the first oxide semiconductor film and thesecond oxide semiconductor film both including the same element may beemployed. Alternatively, heteroepitaxial growth causing the formation ofthe first oxide semiconductor film and the second oxide semiconductorfilm including at least one different element from each other may beemployed.

By the above-described method, the oxide semiconductor film 103 can beformed using a CAAC oxide semiconductor. Hydrogen contained in the oxidesemiconductor reacts with oxygen bonded to a metal atom to producewater, and in addition, a defect is formed in a lattice from whichoxygen is released (or a portion from which oxygen is removed). Thus,impurities are reduced as much as possible in the formation step of theoxide semiconductor film, whereby defects in the oxide semiconductorfilm can be reduced. Therefore, when a channel region is formed in anoxide semiconductor film including a CAAC oxide semiconductor which ispurified by removing impurities as much as possible, the transistor canhave stable electrical characteristics with small change in thresholdvoltage before and after light irradiation or the BT stress test.

In the above-described first heat treatment and the second heattreatment, oxygen may diffuse from the oxide insulating film 102 intothe oxide semiconductor film in some cases. In such a case, defects inthe oxide semiconductor film 103 can be reduced without performing heattreatments between FIG. 2A and FIG. 2B; therefore, the number of heattreatment steps can be reduced.

Embodiment 9

An example of a circuit diagram of a memory element (hereinafter alsoreferred to as a memory cell) included in a semiconductor device isillustrated in FIG. 14A. The memory cell includes a transistor 1160 inwhich a channel formation region is formed using a material other thanan oxide semiconductor (e.g., silicon, germanium, silicon carbide,gallium arsenide, gallium nitride, an organic compound, or the like) anda transistor 1162 in which a channel formation region is formed using anoxide semiconductor.

The transistor 1162 in which the channel formation region is formedusing an oxide semiconductor can be manufactured in accordance with anyof Embodiments 1 to 8. Note that a transistor including an oxidesemiconductor in a channel formation region is denoted by “OS” indrawings.

As illustrated in FIG. 14A, a gate electrode of the transistor 1160 iselectrically connected to one of a source electrode and a drainelectrode of the transistor 1162. A first wiring SL (a 1st line, alsoreferred to as a source line) is electrically connected to a sourceelectrode of the transistor 1160. A second wiring BL (a 2nd line, alsoreferred to as a bit line) is electrically connected to a drainelectrode of the transistor 1160. A third wiring S1 (a 3rd line, alsoreferred to as a first signal line) is electrically connected to theother of the source electrode and the drain electrode of the transistor1162. A fourth wiring S2 (a 4th line, also referred to as a secondsignal line) is electrically connected to a gate electrode of thetransistor 1162.

The transistor 1160 in which the channel formation region is formedusing a material other than an oxide semiconductor, e.g., single crystalsilicon, can operate at sufficiently high speed. Therefore, with the useof the transistor 1160, high-speed reading of stored contents and thelike are possible. The transistor 1162 in which the channel formationregion is formed using an oxide semiconductor is characterized by itsoff-state current which is smaller than the off-state current of thetransistor 1160. Therefore, when the transistor 1162 is turned off, apotential of the gate electrode of the transistor 1160 can be held for avery long time.

By utilizing a characteristic in which the potential of the gateelectrode of the transistor 1160 can be held, writing, holding, andreading of data are possible as described below.

First, writing and holding of data are described. First, a potential ofthe fourth wiring S2 is set to a potential at which the transistor 1162is on, so that the transistor 1162 is turned on. Thus, a potential ofthe third wiring S1 is supplied to the gate electrode of the transistor1160 (writing). After that, the potential of the fourth wiring S2 is setto a potential at which the transistor 1162 is off, so that thetransistor 1162 is turned off, and thus, the potential of the gateelectrode of the transistor 1160 is held (holding).

Since the off-state current of the transistor 1162 is extremely small,the potential of the gate electrode of the transistor 1160 is held for along time. For example, when the potential of the gate electrode of thetransistor 1160 is a potential at which the transistor 1160 is in an onstate, the on state of the transistor 1160 is kept for a long time. Inaddition, when the potential of the gate electrode of the transistor1160 is a potential at which the transistor 1160 is in an off state, theoff state of the transistor 1160 is kept for a long time.

Then, reading of data is described. When a predetermined potential (afixed potential) is supplied to the first wiring SL in a state where theon state or the off state of the transistor 1160 is kept as describedabove, a potential of the second wiring BL varies depending on the onstate or the off state of the transistor 1160. For example, when thetransistor 1160 is in the on state, the potential of the second wiringBL becomes close to the potential of the first wiring SL. On the otherhand, when the transistor 1160 is in the off state, the potential of thesecond wiring BL does not vary.

In such a manner, the potential of the second wiring BL and apredetermined potential are compared with each other in a state wheredata is held, whereby the data can be read out.

Then, rewriting of data is described. Rewriting of data is performed ina manner similar to that of the writing and holding of data. That is, apotential of the fourth wiring S2 is set to a potential at which thetransistor 1162 is on, so that the transistor 1162 is turned on. Thus, apotential of the third wiring S1 (a potential for new data) is suppliedto the gate electrode of the transistor 1160. After that, the potentialof the fourth wiring S2 is set to be a potential at which the transistor1162 is off, so that the transistor 1162 is turned off, and thus, thenew data is held.

In the memory cell according to the disclosed invention, data can bedirectly rewritten by another writing of data as described above. Forthat reason, erasing operation which is necessary for a flash memory orthe like is not needed, so that a reduction in operation speed becauseof erasing operation can be suppressed. In other words, high-speedoperation of the semiconductor device including the memory cell can berealized.

FIG. 14B is a circuit diagram illustrating an extensive applicationexample of the memory cell illustrated in FIG. 14A.

A memory cell 1100 illustrated in FIG. 14B includes a first wiring SL (asource line), a second wiring BL (a bit line), a third wiring S1 (afirst signal line), a fourth wiring S2 (a second signal line), a fifthwiring WL (a word line), a transistor 1164 (a first transistor), atransistor 1161 (a second transistor), and a transistor 1163 (a thirdtransistor). In each of the transistors 1164 and 1163, a channelformation region is formed using a material other than an oxidesemiconductor, and in the transistor 1161, a channel formation region isformed using an oxide semiconductor.

Here, a gate electrode of the transistor 1164 is electrically connectedto one of a source electrode and a drain electrode of the transistor1161. In addition, the first wiring SL is electrically connected to asource electrode of the transistor 1164, and a drain electrode of thetransistor 1164 is electrically connected to a source electrode of thetransistor 1163. The second wiring BL is electrically connected to adrain electrode of the transistor 1163, and the third wiring S1 iselectrically connected to the other of the source electrode and thedrain electrode of the transistor 1161. The fourth wiring S2 iselectrically connected to a gate electrode of the transistor 1161, andthe fifth wiring WL is electrically connected to a gate electrode of thetransistor 1163.

Next, a specific example of operation of the circuit will be described.Note that the values of a potential, a voltage, and the like in thedescription below can be changed as appropriate.

When data is written into the memory cell 1100, the first wiring SL isset to 0 V, the fifth wiring WL is set to 0 V, the second wiring BL isset to 0.0 V, and the fourth wiring S2 is set to 2 V. The third wiringS1 is set to 2 V in order to write data “1” and set to 0 V in order towrite data “0”. At this time, the transistor 1163 is in an off state andthe transistor 1161 is in an on state. Note that at the end of thewriting, before the potential of the third wiring S1 is changed, thefourth wiring S2 is set to 0 V so that the transistor 1161 is turnedoff.

As a result, a potential of a node (referred to as a node A) connectedto the gate electrode of the transistor 1164 is set to approximately 2 Vafter the writing of the data “1” and set to approximately 0 V after thewriting of the data “0”. Electric charge corresponding to a potential ofthe third wiring S1 is accumulated at the node A; since the off-statecurrent of the transistor 1161 is extremely small as described above,the potential of the gate electrode of the transistor 1164 is held for along time.

When data is read from the memory cell, the first wiring SL is set to 0V, the fifth wiring WL is set to 2 V, the fourth wiring S2 and the thirdwiring S1 are set to 0 V, and a reading circuit connected to the secondwiring BL is set in an operation state. At this time, the transistor1163 is in an on state and the transistor 1161 is in an off state.

The transistor 1164 is in an off state when the data “0” has beenwritten, that is, the node A is set to approximately 0 V, so that theresistance between the second wiring BL and the first wiring SL is high.On the other hand, the transistor 1164 is in an on state when the data“1” has been written, that is, the node A is set to approximately 2 V,so that the resistance between the second wiring BL and the first wiringSL is low. A reading circuit can read the data “0” or the data “1” inaccordance with the difference in resistance state of the memory cell.The second wiring BL at the time of the writing is set to 0 V; however,it may be in a floating state or may be charged to have a potentialhigher than 0 V. The third wiring S1 at the time of the reading is setto 0 V; however, it may be in a floating state or may be charged to havea potential higher than 0 V.

Note that the data “1” and the data “0” are defined for convenience andcan be reversed. In addition, the above operation voltages are examples.The operation voltages are set so that the transistor 1164 is turned offin the case of data “0” and turned on in the case of data “1”, thetransistor 1161 is turned on at the time of writing and turned off inperiods except the time of writing, and the transistor 1163 is turned onat the time of reading. In particular, a power supply potential VDD of aperipheral logic circuit may also be used instead of 2 V.

In this embodiment, the memory cell with a minimum storage unit (onebit) is described for easy understanding; however, the structure of thememory cell is not limited thereto. It is also possible to make a moredeveloped semiconductor device with a plurality of memory cellsconnected to each other as appropriate. For example, it is possible tomake a NAND-type or NOR-type semiconductor device by using more than oneof the above memory cells. The wiring structure is not limited to thatin FIG. 14A or 14B and can be changed as appropriate.

FIG. 15 is a block circuit diagram of a semiconductor device accordingto an embodiment of the present invention. The semiconductor deviceincludes m×n bits of memory capacitance.

The semiconductor device illustrated in FIG. 15 includes m fourthwirings S2(1) to S2(m), m fifth wirings WL(1) to WL(m), n second wiringsBL(1) to BL(n), n third wirings S1(1) to S1(n), a memory cell array 1110in which a plurality of memory cells 1100(1,1) to 1100(m,n) is arrangedin a matrix of m rows by n columns (m and n are each a natural number),and peripheral circuits such as a driver circuit 1111 connected to thesecond wirings BL and the third wirings S1, a driver circuit 1113connected to the fourth wirings S2 and the fifth wirings WL, and areading circuit 1112. A refresh circuit or the like may be provided asanother peripheral circuit.

A memory cell 1100(i,j) is considered as a typical example of the memorycell. Here, the memory cell 1100(i,j) (i is an integer of greater thanor equal to 1 and less than or equal to m and j is an integer of greaterthan or equal to 1 and less than or equal to n) is connected to a secondwiring BL(j), a third wiring S1(j), a fourth wiring S2(i), a fifthwiring WL(i), and a first wiring. A first wiring potential Vs issupplied to the first wiring SL. The second wirings BL(1) to BL(n) andthe third wirings S1(1) to S1(n) are connected to the driver circuit1111 connected to the second wirings BL and the third wirings S1 and thereading circuit 1112. The fifth wirings WL(1) to WL(m) and the fourthwirings S2(1) to S2(m) are connected to the driver circuit 1113 throughthe fourth wirings S2 and the fifth wirings WL.

The operation of the semiconductor device illustrated in FIG. 15 will bedescribed. In this configuration, data is written and read per row.

When data is written into memory cells 1100(i,1) to 1100(i,n) of an i-throw, the potential Vs of the first wiring SL is set to 0 V, a fifthwiring WL(i) and the second wirings BL(1) to BL(n) are set to 0 V, and afourth wiring S2(i) is set to 2 V. At this time, the transistors 1161are in an on state. Among the third wirings S1(1) to S1(n), the thirdwiring in a column in which data “1” is to be written is set to 2 V andthe third wiring in a column in which data “0” is to be written is setto 0 V. Note that, to finish writing, the fourth wiring S2(i) is set to0 V before the potentials of the third wirings S1(1) to S1(n) arechanged, so that the transistors 1161 are turned off. Moreover, anon-selected fifth wiring WL and a non-selected fourth wiring S2 are setto 0 V.

As a result, the potential of the node (referred to as the node A)connected to the gate electrode of the transistor 1164 in the memorycell into which data “1” has been written is set to approximately 2 V,and the potential of the node A in the memory cell into which data “0”has been written is set to approximately 0 V. The potential of the nodeA of the non-selected memory cell is not changed.

When data is read from the memory cells 1100(i,1) to 1100(i,n) of thei-th row, the first wiring potential Vs is set to 0 V, the fifth wiringWL(i) is set to 2 V, the fourth wiring S2(i) and the third wirings S1(1)to S1(n) are set to 0 V, and the reading circuit connected to the secondwirings BL(1) to BL(n) is set in an operation state. The reading circuitcan read data “0” or data “1” in accordance with the difference inresistance state of the memory cell, for example. Note that the fifthwirings WL except the fifth wiring WL(i) are set to 0 V, and the fourthwirings S2 except the fourth wirings S2(i) are set to 0 V. The secondwiring BL at the time of the writing is set to 0 V; however, it may bein a floating state or may be charged to have a potential higher than0V. The third wiring S1 at the time of the reading is set to 0 V;however, it may be in a floating state or may be charged to have apotential higher than 0 V.

In accordance with this embodiment, a potential of a node connected to atransistor in which a channel formation region is formed using an oxidesemiconductor can be held for a very long time, whereby a memory cellcapable of writing, holding, and reading of data with low powerconsumption can be manufactured.

Embodiment 10

In this embodiment, an example of a circuit diagram of a memory cellincluding a capacitor will be shown. A memory cell 1170 illustrated inFIG. 16A includes a first wiring SL, a second wiring BL, a third wiringS1, a fourth wiring S2, a fifth wiring WL, a transistor 1171 (a firsttransistor), a transistor 1172 (a second transistor), and a capacitor1173. In the transistor 1171, a channel formation region is formed usinga material other than an oxide semiconductor, and in the transistor1172, a channel formation region is formed using an oxide semiconductor.

The transistor 1172 in which a channel formation region is formed usingan oxide semiconductor can be manufactured in accordance with any ofEmbodiments 1 to 8.

Here, a gate electrode of the transistor 1171, one of a source electrodeand a drain electrode of the transistor 1172, and one electrode of thecapacitor 1173 are electrically connected to each other. In addition,the first wiring SL and a source electrode of the transistor 1171 areelectrically connected to each other. The second wiring BL and a drainelectrode of the transistor 1171 are electrically connected to eachother. The third wiring S1 and the other of the source electrode and thedrain electrode of the transistor 1172 are electrically connected toeach other. The fourth wiring S2 and a gate electrode of the transistor1172 are electrically connected to each other. The fifth wiring WL andthe other electrode of the capacitor 1173 are electrically connected toeach other.

Next, operation of the circuit will be specifically described.

When data is written into the memory cell 1170, the first wiring SL isset to 0 V, the fifth wiring WL is set to 0 V, the second wiring BL isset to 0 V, and the fourth wiring S2 is set to 2 V. The third wiring S1is set to 2 V in order to write data “1” and set to 0 V in order towrite data “0”. At this time, the transistor 1172 is in an on state.Note that, to finish writing, the fourth wiring S2 is supplied with 0 Vbefore the potential of the third wiring S1 is changed, so that thetransistor 1172 is turned off.

As a result, the potential of a node (referred to as a node A) connectedto the gate electrode of the transistor 1171 is set to approximately 2 Vafter the writing of data “1” and is set to approximately 0 V after thewriting of data “0”.

When data is read from the memory cell 1170, the first wiring SL is setto 0 V, the fifth wiring WL is set to 2 V, the fourth wiring S2 is setto 0 V, the third wiring S1 is set to 0 V, and a reading circuitconnected to the second wiring BL is operated. At this time, thetransistor 1172 is in an off state.

The state of the transistor 1171 in the case where the fifth wiring WLis set to 2 V will be described. The potential of the node A whichdetermines the state of the transistor 1171 depends on capacitance C1between the fifth wiring WL and the node A, and capacitance C2 betweenthe gate electrode of the transistor 1171 and the source and drainelectrodes of the transistor 1171.

Note that the third wiring S1 at the time of reading is set to 0 V;however, the third wiring S1 may be in a floating state or may becharged to have a potential higher than 0 V. Data “1” and data “0” aredefined for convenience and may be reversed.

The potential of the third wiring S1 at the time of writing may beselected from the potentials of data “0” and data “1” as long as thetransistor 1172 is turned off after the writing and the transistor 1171is off in the case where the potential of the fifth wiring WL is set to0 V. The potential of the fifth wiring WL at the time of reading may beselected so that the transistor 1171 is turned off in the case wheredata “0” has been written and is turned on in the case where data “1”has been written. For example, the threshold voltage of the transistor1171 may be employed. The transistor 1171 can have any threshold voltageas long as the transistor 1171 operates in the above-described manner.

An example of a NOR semiconductor memory device in which a memory cellincluding a capacitor and a selection transistor having a first gateelectrode and a second gate electrode is used will be described withreference to FIG. 16B.

The memory cell array illustrated in FIG. 16B includes a plurality ofmemory cells 1180 arranged in a matrix of i rows (i is a natural numberof 3 or more) and j columns (j is a natural number of 3 or more), i wordlines WL (word lines WL_1 to WL_i), i capacitor lines CL (capacitorlines CL_1 to CL_i), i gate lines BGL (gate lines BGL_1 to BGL_i), j bitlines BL (bit lines BL_1 to BL_j), and a source line SL. Here, and j areeach a natural number of greater than or equal to 3 for convenience, butthe number of rows and the number of columns of the memory cell arraydescribed in this embodiment are not necessarily greater than or equalto 3. A memory cell array including one row or one column may be used ora memory cell array including two rows or two columns may be used.

The memory cell array illustrated in FIG. 16B includes a plurality ofmemory cells 1180 arranged in a matrix of i rows (i is a natural numberof 3 or more) and j columns (j is a natural number of 3 or more), i wordlines WL (word lines WL_1 to WL_i), i capacitor lines CL (capacitorlines CL_1 to CL_i), i gate lines BGL (gate lines BGL_1 to BGL_i), j bitlines BL (bit lines BL_1 to BL_j), and a source line SL.

Further, each of the plurality of memory cells 1180 (also referred to asa memory cell 1180(M,N) (note that M is a natural number greater than orequal to 1 and less than or equal to i and that N is a natural numbergreater than or equal to 1 and less than or equal to j)) includes atransistor 1181(M,N), a capacitor 1183(M,N), and a transistor 1182(M,N).

Note that in the semiconductor memory device, the capacitor includes afirst capacitor electrode, a second capacitor electrode, and adielectric layer overlapping with the first capacitor electrode and thesecond capacitor electrode. Electric charge is accumulated in thecapacitor in accordance with voltage applied between the first capacitorelectrode and the second capacitor electrode.

The transistor 1181(M,N) is an n-channel transistor which has a sourceelectrode, a drain electrode, a first gate electrode, and a second gateelectrode. Note that in the semiconductor memory device in thisembodiment, the transistor 1181 does not necessarily need to be ann-channel transistor.

One of the source electrode and the drain electrode of the transistor1181(M,N) is connected to the bit line BL_N. The first gate electrode ofthe transistor 1181(M,N) is connected to the word line WL_M. The secondgate electrode of the transistor 1181(M,N) is connected to the gate lineBGL_M. With the configuration in which the one of the source electrodeand the drain electrode of the transistor 1181(M,N) is connected to thebit line BL_N, data can be selectively read from memory cells.

The transistor 1181(M,N) serves as a selection transistor in the memorycell 1180(M,N).

As the transistor 1181(M,N), a transistor in which a channel formationregion is formed using an oxide semiconductor can be used. In thetransistor 1181(M,N), structures and methods for forming the pair ofelectrodes, the oxide semiconductor film, and the gate electrodedescribed in Embodiments 1 to 8 can be applied to the source electrode,the drain electrode, the channel formation region, and the first gateelectrode or the second gate electrode.

The transistor 1182(M,N) is a p-channel transistor. Note that in thesemiconductor memory device in this embodiment, the transistor 1182 doesnot necessarily need to be a p-channel transistor.

One of a source electrode and a drain electrode of the transistor1182(M,N) is connected to the source line SL. The other of the sourceelectrode and the drain electrode of the transistor 1182(M,N) isconnected to the bit line BL_N. A gate electrode of the transistor1182(M,N) is connected to the other of the source electrode and thedrain electrode of the transistor 1181(M,N).

The transistor 1182(M,N) serves as an output transistor in the memorycell 1180(M,N). As the transistor 1182(M,N), for example, a transistorin which a channel formation region is formed using single crystalsilicon can be used.

A first capacitor electrode of the capacitor 1183(M,N) is connected tothe capacitor line CL_M. A second capacitor electrode of the capacitor1183(M,N) is connected to the other of the source electrode and thedrain electrode of the transistor 1181(M,N). Note that the capacitor1183(M,N) serves as a storage capacitor.

The voltages of the word lines WL_1 to WL_i are controlled by, forexample, a driver circuit including a decoder.

The voltages of the bit lines BL_1 to BL_j are controlled by, forexample, a driver circuit including a decoder.

The voltages of the capacitor lines CL_1 to CL_i are controlled by, forexample, a driver circuit including a decoder.

The voltages of the gate lines BGL_1 to BGL_i are controlled by, forexample, a gate line driver circuit.

The gate line driver circuit is formed using a circuit which includes adiode and a capacitor whose first capacitor electrode is electricallyconnected to an anode of the diode and the gate line BGL, for example.

By adjustment of the voltage of the second gate electrode of thetransistor 1181, the threshold voltage of the transistor 1181 can beadjusted. Accordingly, by adjustment of the threshold voltage of thetransistor 1181 functioning as a selection transistor, current flowingbetween the source electrode and the drain electrode of the transistor1181 in an off state can be extremely small. Thus, a data retentionperiod in the memory circuit can be longer. In addition, voltagenecessary for writing and reading data can be made lower than that of aconventional semiconductor device; thus, power consumption can bereduced.

In accordance with this embodiment, a potential of a node connected to atransistor in which a channel formation region is formed using an oxidesemiconductor can be held for a very long time, whereby a memory cellcapable of writing, holding, and reading of data with low powerconsumption can be manufactured. In the memory cell array illustrated inFIG. 16B, the memory cell 1170 illustrated in FIG. 16A can be usedinstead of the memory cell 1180. On this occasion, in accordance withthe memory cell 1170, wirings are provided in an appropriate manner.

The methods and configurations described in this embodiment can becombined as appropriate with any of the methods and configurationsdescribed in the other embodiments.

Embodiment 11

In this embodiment, examples of a semiconductor device using thetransistor described in any of the above embodiments will be describedwith reference to FIGS. 17A and 17B.

FIG. 17A illustrates an example of a semiconductor device whoseconfiguration corresponds to that of a so-called dynamic random accessmemory (DRAM). A memory cell array 1120 illustrated in FIG. 17A has astructure in which a plurality of memory cells 1130 is arranged in amatrix. Further, the memory cell array 1120 includes m first wirings BLand n second wirings WL. Note that in this embodiment, the first wiringBL and the second wiring WL are referred to as a bit line BL and a wordline WL, respectively.

The memory cell 1130 includes a transistor 1131 and a capacitor 1132. Agate electrode of the transistor 1131 is connected to the second wiringWL (the word line WL). Further, one of a source electrode and a drainelectrode of the transistor 1131 is connected to the first wiring BL(the bit line BL). The other of the source electrode and the drainelectrode of the transistor 1131 is connected to one electrode of thecapacitor. The other electrode of the capacitor is connected to acapacitor line CL and is supplied with a predetermined potential. Thetransistor described in any of the above embodiments is applied to thetransistor 1131.

The transistor in which a channel formation region is formed using anoxide semiconductor, which is described in any of the above embodiments,is characterized by having smaller off-state current than a transistorin which a channel formation region is formed using single crystalsilicon. Accordingly, when the transistor is applied to thesemiconductor device illustrated in FIG. 17A, which is regarded as aso-called DRAM, a substantially nonvolatile memory can be obtained.

FIG. 17B illustrates an example of a semiconductor device whoseconfiguration corresponds to that of a so-called static random accessmemory (SRAM). A memory cell array 1140 illustrated in FIG. 17B can havea structure in which a plurality of memory cells 1150 is arranged in amatrix. Further, the memory cell array 1140 includes a first wiring BL,a second wiring BLB (inverted bit line), a third wiring WL, a powersupply line Vdd, and a ground potential line Vss.

The memory cell 1150 includes a first transistor 1151, a secondtransistor 1152, a third transistor 1153, a fourth transistor 1154, afifth transistor 1155, and a sixth transistor 1156. The first transistor1151 and the second transistor 1152 function as selection transistors.One of the third transistor 1153 and the fourth transistor 1154 is ann-channel transistor (here, the fourth transistor 1154 is an n-channeltransistor), and the other of the third transistor 1153 and the fourthtransistor 1154 is a p-channel transistor (here, the third transistor1153 is a p-channel transistor). In other words, the third transistor1153 and the fourth transistor 1154 form a CMOS circuit. Similarly, thefifth transistor 1155 and the sixth transistor 1156 form a CMOS circuit.

The first transistor 1151, the second transistor 1152, the fourthtransistor 1154, and the sixth transistor 1156 are n-channel transistorsand the transistor described in any of the above embodiments can beapplied to these transistors. Each of the third transistor 1153 and thefifth transistor 1155 is a p-channel transistor in which a channelformation region is formed using a material (e.g., single crystalsilicon) other than an oxide semiconductor.

The methods and configurations described in this embodiment can becombined as appropriate with any of the methods and configurationsdescribed in the other embodiments.

Embodiment 12

A central processing unit (CPU) can be formed using a transistorincluding an oxide semiconductor in a channel formation region for atleast part of the CPU.

FIG. 18A is a block diagram illustrating a specific structure of a CPU.The CPU illustrated in FIG. 18A includes an arithmetic logic unit (ALU)1191, an ALU controller 1192, an instruction decoder 1193, an interruptcontroller 1194, a timing controller 1195, a register 1196, a registercontroller 1197, a bus interface (Bus I/F) 1198, a rewritable ROM 1199,and an ROM interface (ROM I/F) 1189 over a substrate 1190. Asemiconductor substrate, an SOI substrate, a glass substrate, or thelike is used as the substrate 1190. The ROM 1199 and the ROM I/F 1189may be provided over a separate chip. Obviously, the CPU illustrated inFIG. 18A is only an example in which the configuration is simplified,and an actual CPU may have various configurations depending on theapplication.

An instruction that is input to the CPU through the bus interface 1198is input to the instruction decoder 1193 and decoded therein, and then,input to the ALU controller 1192, the interrupt controller 1194, theregister controller 1197, and the timing controller 1195.

The ALU controller 1192, the interrupt controller 1194, the registercontroller 1197, and the timing controller 1195 conduct various controlsin accordance with the decoded instruction. Specifically, the ALUcontroller 1192 generates signals for controlling the operation of theALU 1191. While the CPU is executing a program, the interrupt controller1194 judges an interrupt request from an external input/output device ora peripheral circuit on the basis of its priority or a mask state, andprocesses the request. The register controller 1197 generates an addressof the register 1196, and reads/writes data from/to the register 1196 inaccordance with the state of the CPU.

The timing controller 1195 generates signals for controlling operationtimings of the ALU 1191, the ALU controller 1192, the instructiondecoder 1193, the interrupt controller 1194, and the register controller1197. For example, the timing controller 1195 includes an internal clockgenerator for generating an internal clock signal CLK2 based on areference clock signal CLK1, and supplies the clock signal CLK2 to theabove circuits.

In the CPU illustrated in FIG. 18A, a memory cell is provided in theregister 1196. The memory cell described in any of Embodiments 9 to 11can be used as the memory cell provided in the register 1196.

In the CPU illustrated in FIG. 18A, the register controller 1197 selectsan operation of holding data in the register 1196 in accordance with aninstruction from the ALU 1191. That is, the register controller 1197selects whether data is held by a phase-inversion element or a capacitorin the memory cell included in the register 1196. When data holding bythe phase-inversion element is selected, power supply voltage issupplied to the memory cell in the register 1196. When data holding bythe capacitor is selected, the data is rewritten in the capacitor, andsupply of power supply voltage to the memory cell in the register 1196can be stopped.

The power supply can be stopped by providing a switching element betweena memory cell group and a node to which a power supply potential VDD ora power supply potential VSS is supplied, as illustrated in FIG. 18B orFIG. 18C. Circuits illustrated in FIGS. 18B and 18C are described below.

FIGS. 18B and 18C each illustrate an example of a configuration of amemory circuit including a transistor including an oxide semiconductorin a channel formation region as a switching element for controllingsupply of a power supply potential to a memory cell.

The memory device illustrated in FIG. 18B includes a switching element1141 and a memory cell group 1143 including a plurality of memory cells1142. Specifically, as each of the memory cells 1142, the memory celldescribed in any of Embodiments 9 to 11 can be used. Each of the memorycells 1142 included in the memory cell group 1143 is supplied with thehigh-level power supply potential VDD via the switching element 1141.Further, each of the memory cells 1142 included in the memory cell group1143 is supplied with a potential of a signal IN and the low-level powersupply potential VSS.

In FIG. 18B, a transistor including an oxide semiconductor in a channelformation region is used for the switching element 1141, and theswitching of the transistor is controlled by a signal Sig A supplied toa gate electrode thereof.

Note that FIG. 18B illustrates the configuration in which the switchingelement 1141 includes only one transistor; however, without limitationthereto, the switching element 1141 may include a plurality oftransistors. In the case where the switching element 1141 includes aplurality of transistors which serve as switching elements, theplurality of transistors may be connected to each other in parallel, inseries, or in combination of parallel connection and series connection.

Although the switching element 1141 controls the supply of thehigh-level power supply potential VDD to each of the memory cells 1142included in the memory cell group 1143 in FIG. 18B, the switchingelement 1141 may control the supply of the low-level power supplypotential VSS.

In FIG. 18C, an example of a memory device in which each of the memorycells 1142 included in the memory cell group 1143 is supplied with thelow-level power supply potential VSS via the switching element 1141 isillustrated. The supply of the low-level power supply potential VSS toeach of the memory cells 1142 included in the memory cell group 1143 canbe controlled by the switching element 1141.

When a switching element is provided between a memory cell group and anode to which the power supply potential VDD or the power supplypotential VSS is supplied, data can be held even in the case where anoperation of a CPU is temporarily stopped and the supply of the powersupply voltage is stopped; accordingly, power consumption can bereduced. Specifically, for example, while a user of a personal computerdoes not input data to an input device such as a keyboard, the operationof the CPU can be stopped, so that the power consumption can be reduced.

Although the CPU is given as an example, the transistor can also beapplied to an LSI such as a digital signal processor (DSP), a customLSI, or a field programmable gate array (FPGA).

This embodiment can be implemented by being combined as appropriate withany of the above-described embodiments.

Embodiment 13

One mode of a display device including any of the transistorsexemplified in Embodiments 1 to 8 is illustrated in FIGS. 19A and 19B.

FIG. 19A is a top view of a panel. In the panel, a transistor 750 and aliquid crystal element 713 are sealed between a first substrate 701 anda second substrate 706 by a sealant 705. FIG. 19B is a cross-sectionalview taken along a dashed-dotted line M-N in FIG. 19A.

The sealant 705 is provided so as to surround a pixel portion 702provided over the first substrate 701. The second substrate 706 isprovided over the pixel portion 702. Thus, the pixel portion 702 issealed together with a liquid crystal layer 708 by the first substrate701, the sealant 705, and the second substrate 706.

Further, an input terminal 720 is provided in a region that is differentfrom a region surrounded by the sealant 705 over the first substrate701, and flexible printed circuits (FPCs) 718 a and 718 b are connectedto the input terminal 720. The FPC 718 a is electrically connected to asignal line driver circuit 703 which is separately provided over anothersubstrate, and the FPC 718 b is electrically connected to a scan linedriver circuit 704 which is separately provided over another substrate.A variety of signals and potentials supplied to the pixel portion 702are supplied from the signal line driver circuit 703 and the scan linedriver circuit 704 through the FPC 718 a and the FPC 718 b.

Note that there is no particular limitation on a connection method of adriver circuit which is separately provided over another substrate, anda chip on glass (COG) method, a wire bonding method, a tape carrierpackage (TCP) method, a tape automated bonding (TAB) method, or the likecan be used.

As a display element provided in the display device, a liquid crystalelement (also referred to as a liquid crystal display element) can beused. Further, a display medium whose contrast is changed by an electriceffect, such as electronic ink, can be used.

The display device illustrated in FIGS. 19A and 19B includes anelectrode 715 and a wiring 716. The electrode 715 and the wiring 716 areelectrically connected to a terminal included in the FPC 718 a throughan anisotropic conductive film 719.

The electrode 715 is formed using the same conductive film as a firstelectrode 730. The wiring 716 is formed using the same conductive filmas a source electrode and a drain electrode of the transistor 750.

Note that the transistor 750 provided in the pixel portion 702 iselectrically connected to a display element to form a display panel. Avariety of display elements can be used as the display element as longas display can be performed.

The size of a storage capacitor provided in the liquid crystal displaydevice is set considering the leakage current of the transistor providedin the pixel portion or the like so that electric charge can be held fora predetermined period. By using a transistor including an oxidesemiconductor film as described in Embodiments 1 to 8 as the transistor750, it is enough to provide a storage capacitor having capacitance thatis ⅓ or less, preferably ⅕ or less of liquid crystal capacitance of eachpixel.

In the transistor which includes the oxide semiconductor film and isused in this embodiment, the hydrogen concentration can be reduced byheat treatment. Accordingly, the current in an off state (off-statecurrent) can be reduced. Therefore, an electric signal such as an imagesignal can be held for a longer period, and a writing interval can beset longer in an on state. Accordingly, the frequency of refreshoperation can be reduced, which leads to an effect of suppressing powerconsumption. Further, the transistor including the oxide semiconductorfilm can hold a potential supplied to a liquid crystal element even whena storage capacitor is not provided.

In addition, the transistor which includes the oxide semiconductor filmas described in Embodiments 1 to 8 can have relatively high field-effectmobility and thus can operate at high speed. Therefore, by using thetransistor in a pixel portion of a liquid crystal display device, ahigh-quality image can be provided. In addition, since such transistorscan be separately provided in a driver circuit portion and a pixelportion over one substrate, the number of components of the liquidcrystal display device can be reduced.

A mode of a display device using a liquid crystal element as a displayelement is illustrated in FIGS. 19A and 19B. In FIGS. 19A and 19B, theliquid crystal element 713 is a display element including the firstelectrode 730, a second electrode 731, and the liquid crystal layer 708.Note that an insulating film 732 and an insulating film 733 whichfunction as alignment films are provided so that the liquid crystallayer 708 is interposed therebetween. The second electrode 731 isprovided on the second substrate 706 side, and the first electrode 730and the second electrode 731 are stacked with the liquid crystal layer708 positioned therebetween.

Further, a spacer 735 is a columnar spacer formed of an insulating filmover the second substrate 706 in order to control the thickness (a cellgap) of the liquid crystal layer 708. Alternatively, a spherical spacermay be used.

In the case where a liquid crystal element is used as the displayelement, a thermotropic liquid crystal, a low-molecular liquid crystal,a high-molecular liquid crystal, a polymer dispersed liquid crystal, aferroelectric liquid crystal, an antiferroelectric liquid crystal, orthe like can be used for the liquid crystal layer 708. Such a liquidcrystal material exhibits a cholesteric phase, a smectic phase, a cubicphase, a chiral nematic phase, an isotropic phase, or the like dependingon conditions.

Alternatively, a liquid crystal exhibiting a blue phase for which analignment film is unnecessary may be used for the liquid crystal layer708. A blue phase is one of liquid crystal phases, which appears justbefore a cholesteric phase changes into an isotropic phase while thetemperature of a cholesteric liquid crystal is increased. Since the bluephase appears only in a narrow temperature range, a liquid crystalcomposition in which a chiral agent is mixed is used for the liquidcrystal layer in order to improve the temperature range. The liquidcrystal composition which includes a liquid crystal exhibiting a bluephase and a chiral agent has a short response time of 1 millisecond orless and has optical isotropy, which makes the alignment processunneeded and viewing angle dependence small. In addition, since analignment film does not need to be provided and rubbing treatment isunnecessary, electrostatic discharge damage caused by the rubbingtreatment can be prevented and defects and damage of the liquid crystaldisplay device can be reduced in the manufacturing process. Thus,productivity of the liquid crystal display device can be improved.

The specific resistivity of the liquid crystal material is 1×10⁹Ω·cm orhigher, preferably 1×10¹¹Ω·cm or higher, further preferably 1×10¹²Ω·cmor higher. The value of the specific resistivity in this specificationis measured at 20° C.

As an operation mode for the liquid crystal display device of thisembodiment, a twisted nematic (TN) mode, an in-plane-switching (IPS)mode, a fringe field switching (FFS) mode, an axially symmetric alignedmicro-cell (ASM) mode, an optical compensated birefringence (OCB) mode,a ferroelectric liquid crystal (FLC) mode, an antiferroelectric liquidcrystal (AFLC) mode, a vertical alignment (VA) mode, a multi-domainvertical alignment (MVA) mode, an advanced super-view (ASV) mode, apatterned vertical alignment (PVA) mode, a transverse bend alignment(TBA) mode, or the like can be used.

In the liquid crystal display device, a black matrix (a light-blockinglayer); an optical member (an optical substrate) such as a polarizingmember, a retardation member, or an anti-reflection member; and the likeare provided as appropriate. For example, circular polarization may beemployed by using a polarizing substrate and a retardation substrate. Inaddition, a backlight, a side light, or the like may be used as a lightsource.

In addition, it is possible to employ a time-division display method (afield-sequential driving method) with the use of a plurality oflight-emitting diodes (LEDs) as a backlight. By employing afield-sequential driving method, color display can be performed withoutusing a color filter.

As a display method in the pixel portion, a progressive method, aninterlace method, or the like can be employed. Further, color elementscontrolled in a pixel at the time of color display are not limited tothree colors: R, G, and B (R, G, and B correspond to red, green, andblue, respectively). For example, R, G, B, and W (W corresponds towhite), or R, G, B, and one or more of yellow, cyan, magenta, and thelike can be used. Further, the sizes of display regions may differbetween respective dots of color elements. However, one embodiment ofthe present invention is not limited to a liquid crystal display devicefor color display and can be applied to a liquid crystal display devicefor monochrome display.

Here, a typical driving method of a liquid crystal display device willbe described showing some operation modes of liquid crystals asexamples. As methods for driving liquid crystals in liquid crystaldisplay devices, there is a vertical electric field method in whichvoltage is applied perpendicular to a substrate, and a horizontalelectric field method in which voltage is applied parallel to asubstrate.

First, FIGS. 20A and 20B are cross-sectional schematic viewsillustrating a pixel structure of a TN-mode liquid crystal displaydevice.

A layer 3100 including a display element is held between a firstsubstrate 3101 and a second substrate 3102 which are provided so as toface each other. A first polarizing plate 3103 is formed on the firstsubstrate 3101 side, and a second polarizing plate 3104 is formed on thesecond substrate 3102 side. An absorption axis of the first polarizingplate 3103 and an absorption axis of the second polarizing plate 3104are arranged in a cross-Nicol state.

Although not illustrated, a backlight and the like are provided outsidethe second polarizing plate 3104. A first electrode 3108 is provided onthe first substrate 3101 and a second electrode 3109 is provided on thesecond substrate 3102. The first electrode 3108 on the opposite side tothe backlight, that is, on the viewing side, is formed to have alight-transmitting property.

In the case where the liquid crystal display device having such astructure is in a normally white mode, when a voltage is applied betweenthe first electrode 3108 and the second electrode 3109 (referred to as avertical electric field method), liquid crystal molecules 3105 arealigned vertically as illustrated in FIG. 20A. Thus, light from thebacklight cannot pass through the first polarizing plate 3103, whichleads to black display.

When no voltage is applied between the first electrode 3108 and thesecond electrode 3109, the liquid crystal molecules 3105 are alignedhorizontally and twisted on a plane surface as illustrated in FIG. 20B.As a result, light from the backlight can pass through the firstpolarizing plate 3103, which leads to white display. In addition,adjustment of a voltage applied between the first electrode 3108 and thesecond electrode 3109 enables expression of gray scale. In this manner,a predetermined image is displayed.

A known liquid crystal material may be used for a TN-mode liquid crystaldisplay device.

FIGS. 20C and 20D are cross-sectional schematic views illustrating apixel structure of a VA-mode liquid crystal display device. In the VAmode, the liquid crystal molecules 3105 are aligned to be vertical tothe substrate when no electric field is applied.

As in FIGS. 20A and 20B, the first electrode 3108 is provided on thefirst substrate 3101 and the second electrode 3109 is provided on thesecond substrate 3102. The first electrode 3108 on the opposite side tothe backlight, that is, on the viewing side, is formed to have alight-transmitting property. The first polarizing plate 3103 is formedon the first substrate 3101 side, and the second polarizing plate 3104is formed on the second substrate 3102 side. The absorption axis of thefirst polarizing plate 3103 and the absorption axis of the secondpolarizing plate 3104 are arranged in a cross-Nicol state.

In the liquid crystal display device having such a structure, when avoltage is applied between the first electrode 3108 and the secondelectrode 3109 (the vertical electric field method), the liquid crystalmolecules 3105 are aligned horizontally as illustrated in FIG. 20C.Thus, light from the backlight can pass through the first polarizingplate 3103, which leads to white display.

When no voltage is applied between the first electrode 3108 and thesecond electrode 3109, the liquid crystal molecules 3105 are alignedvertically as illustrated in FIG. 20D. As a result, light from thebacklight which is polarized by the second polarizing plate 3104 passesthrough a cell without being influenced by birefringence of the liquidcrystal molecules 3105. Thus, the polarized light from the backlightcannot pass through the first polarizing plate 3103, which leads toblack display. In addition, adjustment of a voltage applied between thefirst electrode 3108 and the second electrode 3109 enables expression ofgray scale. In this manner, a predetermined image is displayed.

FIGS. 20E and 20F are cross-sectional schematic views illustrating apixel structure of an MVA-mode liquid crystal display device. The MVAmode is a method in which one pixel is divided into a plurality ofportions, and the portions have different alignment directions of theliquid crystal molecules 3105 and compensate the viewing angledependencies with each other. As illustrated in FIG. 20E, in the MVAmode, a protrusion 3158 whose cross section is a triangle is provided onthe first electrode 3108 and a protrusion 3159 whose cross section is atriangle is provided on the second electrode 3109 for controllingalignment. Note that the structures other than the protrusions are incommon with the structures in the VA mode.

When a voltage is applied between the first electrode 3108 and thesecond electrode 3109 (the vertical electric field method), the liquidcrystal molecules 3105 are aligned so that a long axis of the liquidcrystal molecule 3105 is substantially vertical to surfaces of theprojections 3158 and 3159 as illustrated in FIG. 20E. Thus, light fromthe backlight can pass through the first polarizing plate 3103, whichleads to white display.

When no voltage is applied between the first electrode 3108 and thesecond electrode 3109, the liquid crystal molecules 3105 are alignedhorizontally as illustrated in FIG. 20F. As a result, light from thebacklight cannot pass through the first polarizing plate 3103, whichleads to black display. In addition, adjustment of a voltage appliedbetween the first electrode 3108 and the second electrode 3109 enablesexpression of gray scale. In this manner, a predetermined image isdisplayed.

FIGS. 23A and 23B are a top view and a cross-sectional view,respectively, of another example of the MVA mode. In FIG. 23A, a secondelectrode 3109 a, a second electrode 3109 b, and a second electrode 3109c are formed into a bent pattern of a dogleg-like shape. As illustratedin FIG. 23B, an insulating layer 3162 that is an alignment film isformed over the second electrodes 3109 a, 3109 b, and 3109 c. Theprotrusion 3158 is formed on the first electrode 3108 so as to overlapwith the second electrode 3109 b. An insulating layer 3163 that is analignment film is formed on the first electrode 3108 and the protrusion3158.

Next, FIGS. 21A and 21B are cross-sectional schematic views illustratinga pixel structure of an OCB-mode liquid crystal display device. In theOCB mode, the liquid crystal molecules 3105 align so as to compensatethe viewing angle dependency in a liquid crystal layer. This alignmentis referred to as bend alignment.

As in FIGS. 20A to 20F, the first electrode 3108 is provided on thefirst substrate 3101 and the second electrode 3109 is provided on thesecond substrate 3102. The first electrode 3108 on the opposite side tothe backlight, that is, on the viewing side, is formed to have alight-transmitting property. The first polarizing plate 3103 is formedon the first substrate 3101 side, and the second polarizing plate 3104is formed on the second substrate 3102 side. The absorption axis of thefirst polarizing plate 3103 and the absorption axis of the secondpolarizing plate 3104 are arranged in a cross-Nicol state.

In the liquid crystal display device having such a structure, when acertain voltage is applied to the first electrode 3108 and the secondelectrode 3109 (the vertical electric field method), black display isperformed as illustrated in FIG. 21A. At that time, liquid crystalmolecules 3105 are aligned vertically. Thus, light from the backlightcannot pass through the first polarizing plate 3103, which leads toblack display.

When a certain voltage is applied between the first electrode 3108 andthe second electrode 3109, the liquid crystal molecules 3105 are in abend alignment state as illustrated in FIG. 21B. As a result, light fromthe backlight can pass through the first polarizing plate 3103, whichleads to white display. In addition, adjustment of a voltage appliedbetween the first electrode 3108 and the second electrode 3109 enablesexpression of gray scale. In this manner, a predetermined image isdisplayed.

In the OCB mode, the viewing angle dependency can be compensated byalignment of the liquid crystal molecules 3105 in a liquid crystallayer.

FIGS. 21C and 21D are cross-sectional schematic views illustrating pixelstructures of an FLC-mode liquid crystal display device and an AFLC-modeliquid crystal display device.

As in FIGS. 20A to 20F, the first electrode 3108 is provided on thefirst substrate 3101 and the second electrode 3109 is provided on thesecond substrate 3102. The first electrode 3108 on the opposite side tothe backlight, that is, on the viewing side, is formed to have alight-transmitting property. The first polarizing plate 3103 is formedon the first substrate 3101 side, and the second polarizing plate 3104is formed on the second substrate 3102 side. The absorption axis of thefirst polarizing plate 3103 and the absorption axis of the secondpolarizing plate 3104 are arranged in a cross-Nicol state.

In the liquid crystal display device having such a structure, when avoltage is applied to the first electrode 3108 and the second electrode3109 (the vertical electric field method), the liquid crystal molecules3105 are aligned horizontally in a direction deviated from a rubbingdirection. Thus, light from the backlight can pass through the firstpolarizing plate 3103, which leads to white display.

When no voltage is applied between the first electrode 3108 and thesecond electrode 3109, the liquid crystal molecules 3105 are alignedhorizontally along the rubbing direction as shown in FIG. 21D. As aresult, light from the backlight cannot pass through the firstpolarizing plate 3103, which leads to black display. In addition,adjustment of a voltage applied between the first electrode 3108 and thesecond electrode 3109 enables expression of gray scale. In this manner,a predetermined image is displayed.

A known liquid crystal material may be used for the FLC-mode liquidcrystal display device and the AFLC-mode liquid crystal display device.

FIGS. 22A and 22B are cross-sectional schematic views each illustratinga pixel structure of a liquid crystal display device of an IPS mode. Inthe IPS mode, liquid crystal molecules 3105 are rotated constantly on aplane surface with respect to a substrate, and a horizontal electricfield mode in which electrodes are provided only on one substrate sideis employed.

The IPS mode is characterized in that liquid crystals are controlled bya pair of electrodes which is provided on one substrate. That is, a pairof electrodes 3150 and 3151 is provided over the second substrate 3102.The pair of electrodes 3150 and 3151 preferably has a light transmittingproperty. The first polarizing plate 3103 is formed on the firstsubstrate 3101 side and the second polarizing plate 3104 is formed onthe side of the second substrate 3102. The absorption axis of the firstpolarizing plate 3103 and the absorption axis of the second polarizingplate 3104 are arranged in a cross-Nicol state.

When a voltage is applied between the pair of electrodes 3150 and 3151in a liquid crystal display device having such a structure, the liquidcrystal molecules 3105 are aligned along a line of electric force whichis deviated from the rubbing direction, as illustrated in FIG. 22A. As aresult, light from a backlight can pass through the first polarizingplate 3103, and white is displayed.

When no voltage is applied between the pair of electrodes 3150 and 3151,the liquid crystal molecules 3105 are aligned horizontally along therubbing direction, as illustrated in FIG. 22B. As a result, light from abacklight cannot pass through the first polarizing plate 3103, and blackis displayed. In addition, adjustment of a voltage applied between thepair of electrodes 3150 and 3151 enables expression of gray scale. Inthis manner, a predetermined image is displayed.

FIGS. 24A to 24C each illustrate an example of the pair of electrodes3150 and 3151 that can be used in the IPS mode. As illustrated in topviews of FIGS. 24A to 24C, the pair of electrodes 3150 and 3151 arealternatively formed. In FIG. 24A, electrodes 3150 a and 3151 a have anundulating wave shape. In FIG. 24B, electrodes 3150 b and 3151 b eachhave a comb-shape and partly overlap with each other. In FIG. 24C,electrodes 3150 c and 3151 c have a comb-like shape in which theelectrodes are meshed with each other.

FIGS. 22C and 22D are cross-sectional schematic views each illustratinga pixel structure of a liquid crystal display device of an FFS mode. TheFFS mode is also vertical electronic field type as the IPS mode and hasa structure in which the electrode 3151 is formed over the electrode3150 with an insulating film provided therebetween as shown in FIGS. 22Cand 22D.

The pair of electrodes 3150 and 3151 preferably has a light transmittingproperty. The first polarizing plate 3103 is formed on the firstsubstrate 3101 side and the second polarizing plate 3104 is formed onthe second substrate 3102 side. The absorption axis of the firstpolarizing plate 3103 and the absorption axis of the second polarizingplate 3104 are arranged in a cross-Nicol state.

When a voltage is applied between the pair of electrodes 3150 and 3151in a liquid crystal display device having such a structure, the liquidcrystal molecules 3105 are aligned along a line of electric force whichis deviated from the rubbing direction, as illustrated in FIG. 22C. As aresult, light from the backlight can pass through the first polarizingplate 3103, which leads to white display.

When no voltage is applied between the pair of electrodes 3150 and 3151,the liquid crystal molecules 3105 are aligned horizontally along therubbing direction, as illustrated in FIG. 22D. As a result, light from abacklight cannot pass through the first polarizing plate 3103, and blackis displayed. In addition, adjustment of a voltage applied between thepair of electrodes 3150 and 3151 enables expression of gray scale. Inthis manner, a predetermined image is displayed.

FIGS. 25A to 25C each show an example of the pair of electrodes 3150 and3151 that can be used in the FFS mode. As illustrated in top views ofFIGS. 25A to 25C, the electrodes 3151 are formed into various patternsover the electrodes 3150. In FIG. 25A, the electrode 3151 a over theelectrode 3150 a has a bent dogleg-like shape. In FIG. 25B, theelectrode 3151 b over the electrode 3150 b has a comb-like shape inwhich the electrodes are meshed with each other. In FIG. 25C, theelectrode 3151 c over the electrode 3150 c has a comb-like shape.

A known material may be used for a liquid crystal material of the IPSmode and the FFS mode. Alternatively, a liquid crystal exhibiting a bluephase may be used.

In FIGS. 19A and 19B, the substrate 101 that is described in Embodiment1 can be used as the first substrate 701 and the second substrate 706 asappropriate. Alternatively, a flexible substrate can be used as thefirst substrate 701 and the second substrate 706. For example, a plasticsubstrate having a light-transmitting property or the like can be used.As plastic, a fiberglass-reinforced plastics (FRP) plate, a polyvinylfluoride (PVF) film, a polyester film, or an acrylic resin film can beused. In addition, a sheet with a structure in which an aluminum foil issandwiched between PVF films or polyester films can be used.

The liquid crystal display device performs display by transmitting lightfrom a light source or a display element. Therefore, the substrate andthe thin films such as the insulating film and the conductive filmprovided for the pixel portion where light is transmitted havelight-transmitting properties with respect to light in the visible-lightwavelength range.

The first electrode and the second electrode (each of which is alsoreferred to as a pixel electrode, a common electrode, a counterelectrode, or the like) for applying voltage to the display element mayhave light-transmitting properties or light-reflecting properties, whichdepends on the direction in which light is extracted, the position wherethe electrode is provided, and the pattern structure of the electrode.

The first electrode 730 and the second electrode 731 can be formed usinga light-transmitting conductive material such as indium oxide includingtungsten oxide, indium zinc oxide including tungsten oxide, indium oxideincluding titanium oxide, indium tin oxide including titanium oxide,indium tin oxide (also referred to as ITO), indium zinc oxide, or indiumtin oxide to which silicon oxide is added. Alternatively, a materialformed of one to ten graphene sheets may be used.

The first electrode 730 and the second electrode 731 can be formed usinga conductive composition including a conductive macromolecule (alsoreferred to as a conductive polymer). As the conductive macromolecule, aso-called π-electron conjugated conductive macromolecule can be used.For example, polyaniline or a derivative thereof, polypyrrole or aderivative thereof, polythiophene or a derivative thereof, and acopolymer of two or more of aniline, pyrrole, and thiophene or aderivative thereof can be given.

In the case of a reflective liquid crystal display device, one of thefirst electrode 730 and the second electrode 731 can be formed of one ormore kinds of materials selected from metals such as tungsten (W),molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium(Nb), tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), titanium(Ti), platinum (Pt), aluminum (Al), copper (Cu), and silver (Ag); alloysof these metals; and nitrides of these metals.

Further, since a transistor is easily broken by static electricity orthe like, a protection circuit is preferably provided. The protectioncircuit is preferably formed using a nonlinear element. Here, a mode ofprotection circuit that can be used in the display device of thisembodiment will be described with reference to FIGS. 26A and 26B.

A protection circuit 997 includes transistors 970 a and 970 b which aren-channel transistors. Each gate terminal of the transistors 970 a and970 b is connected to each drain terminal to have similarcharacteristics as a diode. The transistors disclosed in the any ofEmbodiments 1 to 8 can be used as the transistors 970 a and 970 b.

A first terminal (a gate) and a third terminal (a drain) of thetransistor 970 a are connected to a first wiring 945 and a secondterminal (a source) of the transistor 970 a is connected to a secondwiring 960. A first terminal (a gate) and a third terminal (a drain) ofthe transistor 970 b are connected to the second wiring 960 and a secondterminal (a source) of the transistor 970 b is connected to the firstwiring 945. That is, the protection circuit illustrated in FIG. 26Aincludes two transistors whose rectifying directions are opposite toeach other and each of which connects the first wiring 945 and thesecond wiring 960. In other words, the protection circuit includes thetransistor whose rectifying direction is from the first wiring 945 tothe second wiring 960 and the transistor whose rectifying direction isfrom the second wiring 960 to the first wiring 945, between the firstwiring 945 and the second wiring 960.

In the above protection circuit, when the second wiring 960 ispositively or negatively charged due to static electricity or the like,current flows in a direction in which the charge is cancelled. Forexample, when the second wiring 960 is positively charged, current flowsin a direction in which the positive charge is released to the firstwiring 945. Owing to this operation, electrostatic breakdown ormalfunctions of a circuit or an element connected to the charged secondwiring 960 can be prevented. In the structure in which the chargedsecond wiring 960 and another wiring intersect with an insulating layerinterposed therebetween, this operation can further prevent dielectricbreakdown of the insulating layer.

Note that the protection circuit is not limited to the above structure.For example, a structure in which a plurality of transistors whoserectifying direction is from the first wiring 945 to the second wiring960 and a plurality of transistors whose rectifying direction is fromthe second wiring 960 to the first wiring 945 are connected may beemployed. In addition, a protection circuit can be configured using anodd number of transistors.

The protection circuit shown in FIG. 26A as an example can be applied tovarious uses. For example, the first wiring 945 is used as a commonwiring of a display device, the second wiring 960 is used as one of aplurality of signal lines, and the protection circuit can be providedtherebetween. A pixel transistor connected to the signal line which isprovided with the protection circuit is protected from malfunctions,such as electrostatic breakdown due to charged wirings, a shift inthreshold voltage, and the like.

Note that the protection circuit can be applied to not only othercircuits in the liquid crystal display device but also the semiconductordevices described in the other embodiments.

Next, a mode in which the protection circuit 997 is formed over asubstrate will be described. An example of a top view of the protectioncircuit 997 is illustrated in FIG. 26B. Here, description will be madeusing the transistor described in Embodiment 1. Note that some ofcomponents of the transistor (e.g., a protective film, a gate insulatingfilm, and an insulating film) are not shown for simplicity.

The transistor 970 a includes a gate electrode 911 a, and the gateelectrode 911 a is connected to the first wiring 945. A source electrodeof the transistor 970 a is connected to the second wiring 960 and adrain electrode thereof is connected to the first wiring 945 through afirst electrode 915 a. In addition, the transistor 970 a includes asemiconductor film 913 which overlaps with the gate electrode 911 abetween the source electrode and the drain electrode.

The transistor 970 b includes a gate electrode 911 b. The gate electrode911 b is connected to the second wiring 960 through a contact hole 925b. A drain electrode of the transistor 970 b is connected to the secondwiring 960. A source electrode of the transistor 970 b is connected tothe first wiring 945 through the first electrode 915 a and a contacthole 925 a. In addition, the transistor 970 b includes a semiconductorfilm 914 which overlaps with the gate electrode 911 b between the sourceelectrode and the drain electrode.

As described above, by applying any of the transistors exemplified inEmbodiments 1 to 8 to a transistor in a protection circuit, a highlyreliable liquid crystal display device can be provided. Note that thetransistors exemplified in Embodiments 1 to 8 can be applied to not onlysemiconductor devices having the display functions described above butalso semiconductor devices having a variety of functions, such as asemiconductor device having an image sensor function of readinginformation of an object.

In this embodiment, although a liquid crystal display device in which aliquid crystal element is used as a display element has been describedas a mode of a display device; however, the present invention is notlimited thereto. For example, a mode of the display device can be alight-emitting display device by using a light-emitting element as adisplay element. Further, a mode of the display device can be anelectrophoretic display device by using an electrophoretic element as adisplay element.

This embodiment can be freely combined with any of the otherembodiments.

This application is based on Japanese Patent Application serial no.2011-004423 filed with Japan Patent Office on Jan. 12, 2011, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A method for manufacturing a semiconductordevice, comprising steps of: forming a first oxide insulating film overa substrate; forming an oxide semiconductor film over the first oxideinsulating film; performing heat treatment to the oxide semiconductorfilm; selectively etching the oxide semiconductor film to have an endportion of the oxide semiconductor film, wherein the end portion of theoxide semiconductor film comprises a side surface and a top surface ofthe oxide semiconductor film; forming a second oxide insulating filmover the oxide semiconductor film; selectively etching the second oxideinsulating film, thereby forming a protective film covering the endportion of the oxide semiconductor film; forming a pair of wirings indirect contact with the protective film and the oxide semiconductorfilm; forming a gate insulating film in direct contact with the topsurface of the oxide semiconductor film after forming the protectivefilm; and forming a gate electrode overlapping with the oxidesemiconductor film over the gate insulating film.
 2. The method formanufacturing a semiconductor device according to claim 1, furthercomprising a step of: adding a dopant to the oxide semiconductor filmafter forming the gate electrode, so that a first oxide semiconductorregion overlapping with the gate electrode, a pair of second oxidesemiconductor regions between which the first oxide semiconductor regionis sandwiched, and a pair of third oxide semiconductor regions whichoverlaps with the pair of wirings and between which the pair of secondoxide semiconductor regions is sandwiched are formed.
 3. The method formanufacturing a semiconductor device according to claim 2, wherein thepair of second oxide semiconductor regions is regions containing thedopant, and wherein the dopant is at least one of nitrogen, phosphorus,arsenic, hydrogen, helium, neon, argon, krypton, and xenon.
 4. Themethod for manufacturing a semiconductor device according to claim 1,wherein an oxide insulating film from which part of oxygen is releasedby heat treatment is formed as the first oxide insulating film and thesecond oxide insulating film.
 5. The method for manufacturing asemiconductor device according to claim 1, wherein an oxide insulatingfilm containing oxygen at a proportion exceeding a stoichiometricproportion is formed as the first oxide insulating film and the secondoxide insulating film.
 6. The method for manufacturing a semiconductordevice according to claim 1, wherein the heat treatment is performed ata temperature higher than or equal to 150° C. and lower than a strainpoint of the substrate.
 7. The method for manufacturing a semiconductordevice according to claim 1, wherein the oxide semiconductor filmincludes at least one element selected from In, Ga, Sn, and Zn.
 8. Themethod for manufacturing a semiconductor device according to claim 1,wherein the heat treatment is performed at a temperature at whichhydrogen is released from the oxide semiconductor film and oxygencontained in the first oxide insulating film is diffused into the oxidesemiconductor film.
 9. The method for manufacturing a semiconductordevice according to claim 1, wherein the heat treatment is performed ata temperature at which hydrogen is released from the oxide semiconductorfilm and oxygen contained in the first oxide insulating film and thesecond oxide insulating film is diffused into the oxide semiconductorfilm.
 10. The method for manufacturing a semiconductor device accordingto claim 1, wherein the gate insulating film is formed to be in directcontact with top surfaces of the pair of wirings.
 11. A method formanufacturing a semiconductor device, comprising steps of: forming afirst oxide insulating film over a substrate; forming an oxidesemiconductor film over the first oxide insulating film; performing heattreatment to the oxide semiconductor film; selectively etching the oxidesemiconductor film to have an end portion of the oxide semiconductorfilm; forming a second oxide insulating film over the oxidesemiconductor film; selectively etching the second oxide insulatingfilm, thereby forming a protective film covering the end portion of theoxide semiconductor film, wherein the end portion of the oxidesemiconductor film comprises a side surface and a top surface of theoxide semiconductor film; forming a pair of wirings in direct contactwith the protective film and the oxide semiconductor film; forming agate insulating film in direct contact with the top surface of the oxidesemiconductor film after forming the protective film; and forming a gateelectrode overlapping with the oxide semiconductor film over the gateinsulating film, wherein the step of selectively etching the oxidesemiconductor film is performed after the step of performing heattreatment.
 12. The method for manufacturing a semiconductor deviceaccording to claim 11, further comprising a step of: adding a dopant tothe oxide semiconductor film after forming the gate electrode, so that afirst oxide semiconductor region overlapping with the gate electrode, apair of second oxide semiconductor regions between which the first oxidesemiconductor region is sandwiched, and a pair of third oxidesemiconductor regions which overlaps with the pair of wirings andbetween which the pair of second oxide semiconductor regions issandwiched are formed.
 13. The method for manufacturing a semiconductordevice according to claim 12, wherein the pair of second oxidesemiconductor regions is regions containing the dopant, and wherein thedopant is at least one of nitrogen, phosphorus, arsenic, hydrogen,helium, neon, argon, krypton, and xenon.
 14. The method formanufacturing a semiconductor device according to claim 11, wherein anoxide insulating film from which part of oxygen is released by heattreatment is formed as the first oxide insulating film and the secondoxide insulating film.
 15. The method for manufacturing a semiconductordevice according to claim 11, wherein an oxide insulating filmcontaining oxygen at a proportion exceeding a stoichiometric proportionis formed as the first oxide insulating film and the second oxideinsulating film.
 16. The method for manufacturing a semiconductor deviceaccording to claim 11, wherein the heat treatment is performed at atemperature higher than or equal to 150° C. and lower than a strainpoint of the substrate.
 17. The method for manufacturing a semiconductordevice according to claim 11, wherein the oxide semiconductor filmincludes at least one element selected from In, Ga, Sn, and Zn.
 18. Themethod for manufacturing a semiconductor device according to claim 11,wherein the heat treatment is performed at a temperature at whichhydrogen is released from the oxide semiconductor film and oxygencontained in the first oxide insulating film is diffused into the oxidesemiconductor film.
 19. The method for manufacturing a semiconductordevice, according to claim 11, further comprising a step of: selectivelyetching the second oxide insulating film, thereby forming a third oxideinsulating film having a pair of openings, before forming the protectivefilm, wherein the pair of wirings is formed in direct contact with thethird oxide insulating film having the pair of openings and the oxidesemiconductor film.
 20. The method for manufacturing a semiconductordevice according to claim 11, wherein the gate insulating film is formedto be in direct contact with top surfaces of the pair of wirings.
 21. Amethod for manufacturing a semiconductor device, comprising steps of:forming a first oxide insulating film over a substrate; forming an oxidesemiconductor film over the first oxide insulating film; performing heattreatment to the oxide semiconductor film; selectively etching the oxidesemiconductor film to have an end portion of the oxide semiconductorfilm; forming a second oxide insulating film over the oxidesemiconductor film; selectively etching the second oxide insulatingfilm, thereby forming a protective film covering the end portion of theoxide semiconductor film, wherein the end portion of the oxidesemiconductor film comprises a side surface and a top surface of theoxide semiconductor film; forming a pair of wirings in direct contactwith the protective film and the oxide semiconductor film; forming agate insulating film in direct contact with the top surface of the oxidesemiconductor film after forming the protective film; and forming a gateelectrode overlapping with the oxide semiconductor film over the gateinsulating film, wherein the step of performing heat treatment isperformed after the step of selectively etching the oxide semiconductorfilm.
 22. The method for manufacturing a semiconductor device accordingto claim 21, further comprising a step of: adding a dopant to the oxidesemiconductor film after forming the gate electrode, so that a firstoxide semiconductor region overlapping with the gate electrode, a pairof second oxide semiconductor regions between which the first oxidesemiconductor region is sandwiched, and a pair of third oxidesemiconductor regions which overlaps with the pair of wirings andbetween which the pair of second oxide semiconductor regions issandwiched are formed.
 23. The method for manufacturing a semiconductordevice according to claim 22, wherein the pair of second oxidesemiconductor regions is regions containing the dopant, and wherein thedopant is at least one of nitrogen, phosphorus, arsenic, hydrogen,helium, neon, argon, krypton, and xenon.
 24. The method formanufacturing a semiconductor device according to claim 21, wherein anoxide insulating film from which part of oxygen is released by heattreatment is formed as the first oxide insulating film and the secondoxide insulating film.
 25. The method for manufacturing a semiconductordevice according to claim 21, wherein an oxide insulating filmcontaining oxygen at a proportion exceeding a stoichiometric proportionis formed as the first oxide insulating film and the second oxideinsulating film.
 26. The method for manufacturing a semiconductor deviceaccording to claim 21, wherein the heat treatment is performed at atemperature higher than or equal to 150° C. and lower than a strainpoint of the substrate.
 27. The method for manufacturing a semiconductordevice according to claim 21, wherein the oxide semiconductor filmincludes at least one element selected from In, Ga, Sn, and Zn.
 28. Themethod for manufacturing a semiconductor device according to claim 21,wherein the heat treatment is performed at a temperature at whichhydrogen is released from the oxide semiconductor film and oxygencontained in the first oxide insulating film and the second oxideinsulating film is diffused into the oxide semiconductor film.
 29. Themethod for manufacturing a semiconductor device, according to claim 21,further comprising a step of: selectively etching the second oxideinsulating film, thereby forming a third oxide insulating film having apair of openings, before forming the protective film, wherein the pairof wirings is formed in direct contact with the third oxide insulatingfilm having the pair of openings and the oxide semiconductor film. 30.The method for manufacturing a semiconductor device according to claim21, wherein the gate insulating film is formed to be in direct contactwith top surfaces of the pair of wirings.